In a semiconcuctor sample subjected to the Hall experiment the velocity of the majority carriers was found to be 2x10 cm/a while the sample resistance was found to be 2 KO. The sample width is 3 cm, and its length is 6 cm while the sample cross sectional area is 1.5 cm and the currant through the sample length is 30 ma under an applied magnetic field of 5 KG. The mobility of the majority carriers will be: O 166.7 cm^2NS O 53.33 cm^2/VS O 2.000e6 cm^2/N.s O 1000 cm^2/N.S O 2000 cm^2Ns
In a semiconcuctor sample subjected to the Hall experiment the velocity of the majority carriers was found to be 2x10 cm/a while the sample resistance was found to be 2 KO. The sample width is 3 cm, and its length is 6 cm while the sample cross sectional area is 1.5 cm and the currant through the sample length is 30 ma under an applied magnetic field of 5 KG. The mobility of the majority carriers will be: O 166.7 cm^2NS O 53.33 cm^2/VS O 2.000e6 cm^2/N.s O 1000 cm^2/N.S O 2000 cm^2Ns
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