D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit toestablish a de emitter current of 1 mA and provide the highest possible voltage gain while allowingfor a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies.R₂4+VccRE-VEEFigure 7.53 Biasing the BJT using two power supplies. Resistor R isneeded only if the signal is to be capacitively coupled to the base. Otherwise,the base can be connected directly to ground, or to a grounded signal source,resulting in almost total 8-independence of the bias current.

Given, Collector to emitter voltage=VCE=±2V Emitter current=IE=1mA Supply voltage=+VCC=10V, -VEE=-5V…

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. +Vcc Re -VEE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total 8-independence of the bias current.

D7.35 The bias arrangement of Fig. 7.53 is to be used for a common-base amplifier. Design the circuit to establish a de emitter current of 1 mA and provide the highest possible voltage gain while allowing for a signal swing at the collector of ±2 V. Use +10-V and -5-V power supplies. +Vcc Re -VEE Figure 7.53 Biasing the BJT using two power supplies. Resistor R, is needed only if the signal is to be capacitively coupled to the base. Otherwise, the base can be connected directly to ground, or to a grounded signal source, resulting in almost total 8-independence of the bias current.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Similar questions

7.
What is the product of bandwidth called the maximum gain? And its usefulness in testing a common-biased emitter amplifier using the base impedance method ē 7:22 /
Please answer this question asap
7.19 Figure E7.19 shows an N-output current mirror. Assuming that all transistors are matched and have finite Band ignoring the effect of finite output resistances, show that IREF I = 1 : %| 1+ (N+ 1)/B For B = 100, find the maximum number of outputs for an error not exceeding 10%. IN ) IREF Q2 ON QREF -V EE Figure E7.19
A common emitter amplifier has a 15V power supply. If we design for a 6.5V swing (peak voltage) at the output voltage what will the DC voltage drop be across RE? Group of answer choices 2V 10V 6.5 5V
answer please
Topic: Bipolar Junction Transistor Given the transistor circuit with beta as 100. Find: VCE, Collector Current at saturation, and VCE at cut-off.
7.54 In the circuit shown in Fig. P7.54, the transistor has a ß of 200. What is the de voltage at the collector? Replacing the BJT with one of the hybrid-r models (neglecting r), draw the equivalent circuit of the amplifier. Find the input resistances R, and R, and the overall voltage gain (v,/v). For an output signal of ±0.3 V, what values of v and v, are required? +5 V +1.5 V ()I mA 10 k2 Rsig 1 kΩ Rc 1 kN Rin Rih Figure P7.54
If base current, base-emitter voltage and collector current are 0 in BJT, which is the voltage between collector-emitter? a-Is 0 b-Depends on beta c-Depends on collector current and collector resistance d-Equal to collector feed
Consider the circuit depicted in the figure shown below. This circuit is designed using a silicon bipolar junction transistor (BJT) with a forward current gain BF = 100, and two resistances RB = 1kN and Rc = 1kN. The supply voltage is Vcc = 10 volts. The currents Ig and Ic designate the base and collector currents, respectively, whereas the voltage VCẸ denotes the voltage between collector and emitter. Vcc = 10 volts Rc =1 k2 Rg = 1 k2 VCE GND Throughout this question, you will use VBE,on = 0.7 volt and VCE,sat = 0.2 volt. Recall that VBE.on is the threshold voltage of the base-emitter junction, while VCE.sat represents the voltage that is measured between collector and emitter when the BJT is saturated. a) What is the value of the base current In? Please enter the value expressed in milliamperes (mA) in the box below. For instance, if you think that IR = 0.1 A, enter 100 in the box. If you think that Ip = 10 mA, enter 10 in the box. mas-numbas-Iti.ncl.ac.uk Submit part Unanswered b)…
For the circuit shown in Fig. P7.53. draw a complete small-signal equivalent circuit utilizing an appropriate T model for the BJT (use alpha= 0.99). Neglect the transistor output resistance r0. Your circuit should show the values of all components, including the model parameters. What is the input resistance Rin? Calculate the overall voltage gain (vo/vsig).
1. Assume a student wanted to supply more current than the rated 1 A for the series pass transistor by placing a second identical pass transistor in parallel with the first. a) What problem does this create? b) Why isn't is a problem if MOSFET transistors were used? (Ctrl)