Cu Assume that the crystal structure of metallic copper (Cu) results in a density of atoms p 8.46 × 10²m ³. Each Cu atom in the crystal donates one electron to the conduction band, which leads, for the 3-D Fermi gas, to a densityu of states 2m (2) 1 g(ɛ) = 2π² €¹2 where m is the effective mass of the conduction electrons. In the low temperature limit (i.c. T = 0 K), find the Fermi energy E, in units of eV. You may assume m* to be equal to the free electron mass m.
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- The 2DEG in (iii) is patterned to produce a clean, quasi-1D channel. The current I through the channel is = Nev, where N = the number of electrons, e the electronic charge and = the electrons' group velocity. The number of electrons N(ɛ) = f(ɛ, µ)g(ɛ), where f (ɛ, u) =Fermi-Dirac distribution = 1 and g(ɛ) density of states = dn/dɛ. 1+exp() kBT (a). Write down the dispersion relation for free electrons of mass m. What is their group velocity v? (b). Find an expression for g(ɛ) involving the group velocity. Leave your answer in terms of v.The function F(E) shown here is 10 E-Ho 0 KT -10 0.5 → F(E) a. the Fermi function, fo(E) Ob. 1 - fo(E) Oc. 1 + fo(E) Od. kT Ofo/OE Oe.- KTOfo/OEIn a Si semiconductor sample of 200 am length at 600 K the hole concentration as a' function of the sample length follows a quadratic relation of the form p (x) = 1 x1015x, at equilibrium the value of the electric field at 160 jum will be: O 1.935 V/cm O 3.250 V/cm O 5805 V/cm O 55.56 V/cm O 6.450 V/cm
- Copper metal can be well-described by assuming that the electrons inside are free, with a den- sity ne = 8.47 × 1028 m-³. Calculate the Fermi energy EF.The output characteristics of a transistor in common-emitter configuration can be regarded as straight lines connecting the following points 田 IB = 20 μΑ 50 μΑ 80 μΑ VCE(V) 1.0 8.0 1.0 8.0 1.0 8.0 Ic (mA) 1.2 1.4 3.4 4.2 6.1 8.1 Plot the characteristics and superimpose the load line for a 1 k load, given that the supply voltage is 9V and the d.c. base bias is 50 µA. The signal input resistance is 800 Q. When a peak input current of 30 HA varies sinusoidally about mean bias of 50 HA, determine (a) The quiescent collector current (b) The current gain (c) The voltage gain (d) The power gainIf the Fermi energy of a metal is E, = 4.6 eV, and the mean free time of an electron is 3*10^-14what is the average free path in the metal?
- ASAPGraph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mBi = 3.47 × 10-25 kg) at the temperature T = 0 K. What is the number of conduction electrons per unit volume for Bismuth? 1 1 2 3 4 5 6 7 8 E (ev) P(E)A silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C.
- Example 1: Find the hole concentration in N-type semiconductor when the donor concentration is 2 x102cm-3 and intrinsic value of silicon material at T = 300° K is 1.25 x10 cm-3. ст %3D стThe Fermi energy of silver is µF = 5.51 eV. a) Calculate µ(7) of Ag at T = 400 and 4000 K. b) What is the rms speed of electrons at 0 K? What is the Fermi velocity? c) Plot the Fermi function at 0 and 4000 K in one graph and discuss the differences.(a): Calculate Miller's indices in the hexagonal structure of its intersections. ai = 1, ar--1/2, as = 1,c= o and draw it. (b): the potential energy of a diatomic molecule is given by U = A B . where A and B are constants and r is the separation distance between the atoms. For the H2 molecule, take A = 0.124 x 10-120 eV. m2 and B = 1.488 x 10 eV.m. Find the separation distance at which the energy of the molecule is a minimum. Q3: Calculate the dhai of tetragonal using the concepts of reciprocal lattice