Consider a sample of Si at 300 K in which the Fermi level is found 0.10 eV below the bottom of the conduction band. What is the probability of a hole occupying an energy state 0.10 eV below the Fermi level? If you use the Boltzmann approximation, explain briefly why it is valid at 300 K.

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Consider a sample of Si at 300 K in which the Fermi level is found 0.10 eV below the bottom of the
conduction band. What is the probability of a hole occupying an energy state 0.10 eV below the Fermi
level? If you use the Boltzmann approximation, explain briefly why it is valid at 300 K.
Transcribed Image Text:Consider a sample of Si at 300 K in which the Fermi level is found 0.10 eV below the bottom of the conduction band. What is the probability of a hole occupying an energy state 0.10 eV below the Fermi level? If you use the Boltzmann approximation, explain briefly why it is valid at 300 K.
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