What happens if we increase the temperature from 0 K to a certain value in Fermi-Dirac distribution? A. The spin number of fermions will be able to take integer values. B. The fermions start becoming bozons. C. The probability of having fermions above the Fermi-level will be grater than zero. D. All the states up to EFEF will be occupied while the states below EFEF will always be empty. E. The Fermi-Dirac distribution function will no longer be valid.

Q: 3. Assume the values given in the circuit diagram above. The switch is in position (a) for a long…

A: 3.The given circuit isThe switch is in position (a) for a long time before being thrown into…

Q: Consider two reverse biased diodes. If the ratio of applied reverse bias voltages is 0.5, find the…

A: We need to find out capacitance ratio for given voltage ratio

Q: A silicon sample is supporting an electric field of −1500 V/cm, and the mobilities of electrons and…

A: Electric field, E = -1500V/cm Mobility of electrons, µe = 1000 cm2/V.s Mobility of holes, µp = 400…

Q: Assume that the mobility of electrons in silicon at T = 300 K is un 1300 cm²/V-s. Also assume that…

A: We need to find out the mobility at given temperature for electron

Q: Example/ Fermi Deric probability of level above of Fermi level by 0.3 ev is 1% find Temperature in…

A:

Q: Describe how a capacitor can be used in a DC circuit to store charge /turn on a lightbulb without…

A: We can use capacitor to store charge and light the bulb as

Q: A Capacitor rated at 50-uF is being charged by a constant current of 2 mA. What will the voltage…

A: Current across through the capacitor calculated as I=c * dv/dt For the constant current supply ,…

Q: A diode with n =1.6 conducts 45 mA at 0.75V at room temperature. Find the saturation current Is at…

A: Given, Diode current, ID=45 mA Diode voltage at room temperature, VD=0.75 V n = 1.6

Q: A silicon semiconductor material at T = 300 K is doped with arsenic atoms to a concentration of 2*10…

A: The arsenic atoms are 15th  group element and boron 13th  group element. The arsenic atom will give…

Q: Capacitance per unit area at no reverse bias is two pF/cm². For a step graded diode of area 5cm²,…

A: According to the question, it is given that Capacitance = 2pF/cm2 Area = 5cm² Reverse bias voltage =…

Q: Assume that the mobility of electrons in silicon at T = 300 K is Uz= 1300 cm?/V-s. Also assume that…

A: Given :  Brief description: In the above given question they have mentioned mobility of the electron…

Q: Describe an inductor and the how an inductor stores energy

A: Inductor is a passive bilateral element which has two terminals and it is wound in the form of coil.…

Q: 3. Find no and Po, and locate the Fermi level. Draw the energy band diagram. a. b. Silicon is doped…

A: Refer explanationExplanation:

Thermistors

A thermistor is a special type of resistor whose resistance is more temperature-dependent than standard resistors.  The resistance of the thermistor decreases with increasing temperature. This is the basic principle of thermistors. This allows the thermistor circuit to detect very small temperature changes that cannot be observed with the Resistance temperature detectors (RTDs) or the thermocouples. Since the resistance of a thermistor is temperature dependent, it can be connected to an electrical circuit to measure body temperature. This high sensitivity to temperature changes makes thermistors very useful for accurately controlling and calibrating temperature measurements. In general, resistance increases with increasing temperature in most metals, but thermistors react negatively.