Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50. bbbbb Light FIGURE 4-50 0 The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0. Assume that the steady-state conditions prevail, the semiconductor is made of silicon, Nd=1018 cm³, = 106 s, and T = 300 K. (a) What is the hole concentration at x=? Explain your answer. (b) What is the hole concentration at x=+oo? Explain your answer. (c) Do low-level injection conditions prevail? Explain your answer. (d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration. (Hint: Solve the continuity equation.)
Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50. bbbbb Light FIGURE 4-50 0 The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0. Assume that the steady-state conditions prevail, the semiconductor is made of silicon, Nd=1018 cm³, = 106 s, and T = 300 K. (a) What is the hole concentration at x=? Explain your answer. (b) What is the hole concentration at x=+oo? Explain your answer. (c) Do low-level injection conditions prevail? Explain your answer. (d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration. (Hint: Solve the continuity equation.)
Power System Analysis and Design (MindTap Course List)
6th Edition
ISBN:9781305632134
Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma
Chapter4: Transmission Line Parameters
Section: Chapter Questions
Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...
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![Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50.
bbbbb
Light
FIGURE 4-50
0
The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole
pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0.
Assume that the steady-state conditions prevail, the semiconductor is made of silicon,
Nd=1018 cm³, = 106 s, and T = 300 K.
(a) What is the hole concentration at x=? Explain your answer.
(b) What is the hole concentration at x=+oo? Explain your answer.
(c) Do low-level injection conditions prevail? Explain your answer.
(d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration.
(Hint: Solve the continuity equation.)](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2Fd53b5d21-36fa-4ee2-932f-fd40dc0982c5%2F3a8a950b-aeca-49d8-9f93-f24240a31880%2Fl77eu5_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50.
bbbbb
Light
FIGURE 4-50
0
The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole
pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0.
Assume that the steady-state conditions prevail, the semiconductor is made of silicon,
Nd=1018 cm³, = 106 s, and T = 300 K.
(a) What is the hole concentration at x=? Explain your answer.
(b) What is the hole concentration at x=+oo? Explain your answer.
(c) Do low-level injection conditions prevail? Explain your answer.
(d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration.
(Hint: Solve the continuity equation.)
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