Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 250 m and n = 1.5 x 1010 cm-3 ст %3D (Ans. 2.25 x 10°cm-3,0.250.cm).
Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 250 m and n = 1.5 x 1010 cm-3 ст %3D (Ans. 2.25 x 10°cm-3,0.250.cm).
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Author:Robert L. Boylestad
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![Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron
concentration (n) at 300 k?. What is the resistivity? H, = 2505
nį = 1.5 x 1010cm-3
cm-2
and
V.S
(Ans. 2.25 x 103 cm-3, 0.252.cm).](/v2/_next/image?url=https%3A%2F%2Fcontent.bartleby.com%2Fqna-images%2Fquestion%2F0b3f185f-c2fa-4a2c-b4d6-7464f3165cff%2F8bf97222-ed2a-456f-b3b1-87d4555a106a%2Fpynofvw_processed.jpeg&w=3840&q=75)
Transcribed Image Text:Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron
concentration (n) at 300 k?. What is the resistivity? H, = 2505
nį = 1.5 x 1010cm-3
cm-2
and
V.S
(Ans. 2.25 x 103 cm-3, 0.252.cm).
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