Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm, n= 10"cm³, H,= 1000 cm/V-sec, u,= 500 cm²/V-sec, Tno=2×10's, Tpo=1×10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 3×10² cm³ at x-0 (edge of the sample). Assuming steady state, then hole concentration at x=20um is . .×10"cm³. (use kT=0.025eV at 300K) a) b) 3.4 c) 5.1 d) 10.1 e) 15.2

Consider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 105 cm, n= 10"cm³, H,= 1000 cm/V-sec, u,= 500 cm²/V-sec, Tno=2×10's, Tpo=1×10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-h pair of 3×10² cm³ at x-0 (edge of the sample). Assuming steady state, then hole concentration at x=20um is . .×10"cm³. (use kT=0.025eV at 300K) a) b) 3.4 c) 5.1 d) 10.1 e) 15.2

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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