Semiconductors can be used to senseelectrical activity of cells and tissues. Duringthe fabrication of semiconductors, doping (n-type or p-type) can be done by diffusingatoms into silicon wafers. Phosphorus atomscan be used to produce a n-typesemiconductor. If the backgroundconcentration of P in Si is 1.5x1020 atoms/m3,and the predeposition heat treatment isconducted at 900°C for 55 minutes, with aconstant concentration at the surface of7x1026 P atoms/m³, calculate the diffusiontime required for a junction depth of 1.7 um.Consider that the drive-in treatmenttemperature is 1100°C. Use Qd and Do valuesof 4.10 eV and 2.39x10-3 m²/s, respectively.

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concentration of P in Si is 1.5x1o20 atoms/m3, and the predeposition heat treatment is conducted at 900°C for 55 minutes, with a constant concentration at the surface of 7x1026 P atoms/m3, calculate the diffusion time required for a junction depth of 1.7 µm. Consider that the drive-in treatment temperature is 1100°C. Use Qd and Do values of 4.10 eV and 2.39x10¯3 m²/s, respectively.

concentration of P in Si is 1.5x1o20 atoms/m3, and the predeposition heat treatment is conducted at 900°C for 55 minutes, with a constant concentration at the surface of 7x1026 P atoms/m3, calculate the diffusion time required for a junction depth of 1.7 µm. Consider that the drive-in treatment temperature is 1100°C. Use Qd and Do values of 4.10 eV and 2.39x10¯3 m²/s, respectively.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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