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1. Zener and Avalanche breakdown 2. Define PIV of a Diode. 3. Determine the dc resistance of a diode at VD =-20V if its reverse saturation current is 1uA (The VT=25 mv at room temperature) 4. Give at least two examples of semiconductor materials which are used for LED. 5. Develop the basic Diode equation. Using the same find the percentage increase in reverse saturation current of a PN junction diode if the temperature is increased from 25°C to 50°C. 6. A diode is operated at room temperature with IS=10-¹0 A and n=2. i) What is the diode current ID, if the voltage across the diode is VD=0.65 V? ii)What voltage VD is required for a diode current of 200 μΑ. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K 13 Ge ||₁₁| +2V 4.3K www T₂ 7. A silicon diode having 20 internal resistance is used as half wave rectifier. If the applied input voltage is 50 sin100nt and load resistance is 800 02, then find a) Im, Idc and Irms b) Output frequency and ripple factor www

1. Zener and Avalanche breakdown 2. Define PIV of a Diode. 3. Determine the dc resistance of a diode at VD =-20V if its reverse saturation current is 1uA (The VT=25 mv at room temperature) 4. Give at least two examples of semiconductor materials which are used for LED. 5. Develop the basic Diode equation. Using the same find the percentage increase in reverse saturation current of a PN junction diode if the temperature is increased from 25°C to 50°C. 6. A diode is operated at room temperature with IS=10-¹0 A and n=2. i) What is the diode current ID, if the voltage across the diode is VD=0.65 V? ii)What voltage VD is required for a diode current of 200 μΑ. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K 13 Ge ||₁₁| +2V 4.3K www T₂ 7. A silicon diode having 20 internal resistance is used as half wave rectifier. If the applied input voltage is 50 sin100nt and load resistance is 800 02, then find a) Im, Idc and Irms b) Output frequency and ripple factor www

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Subject: Electronics Engineering Solve no 7
1. Zener and Avalanche breakdown 2. Define PIV of a Diode. 3. Determine the dc resistance of a diode at VD =-20V if its reverse saturation current is 1uA (The VT=25 mv at room temperature) 4. Give at least two examples of semiconductor materials which are used for LED. 5. Develop the basic Diode equation. Using the same find the percentage increase in reverse saturation current of a PN junction diode if the temperature is increased from 25°C to 50°C. 6. A diode is operated at room temperature with IS =10-¹0 A and n=2. i)What is the diode current ID, if the voltage across the diode is VD=0.65 V ? ii)What voltage VĎ is required for a diode current of 200 μΑ. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K www 13 Ge ||₁₁| +2V 4.3K www T₂ 7. A silicon diode having 200 internal resistance is used as half wave rectifier. If the applied input voltage is 50 sin100πt and load resistance is 800 Q2, then find a) Im, Idc and Irms b) Output frequency and ripple factor c) AC input and output power d) efficiency 8. 9. Differentiate zener and avalanche breakdown. 10.Draw and explain the V-I characteristics of silicon diode. 11.Design a voltage regulator using zener diode to meet the following specification; Unregulated voltage=20V, Vo=10V, load current is 0- 20mA, 12min=10mA, 12max=100mA 12. What do you mean by break region of a diode? What is Avalnche break down? 13. Explain the operation of P-N junction diode with V-I characteristics. 14.
Transcribed Image Text:1. Zener and Avalanche breakdown 2. Define PIV of a Diode. 3. Determine the dc resistance of a diode at VD =-20V if its reverse saturation current is 1uA (The VT=25 mv at room temperature) 4. Give at least two examples of semiconductor materials which are used for LED. 5. Develop the basic Diode equation. Using the same find the percentage increase in reverse saturation current of a PN junction diode if the temperature is increased from 25°C to 50°C. 6. A diode is operated at room temperature with IS =10-¹0 A and n=2. i)What is the diode current ID, if the voltage across the diode is VD=0.65 V ? ii)What voltage VĎ is required for a diode current of 200 μΑ. Determine 1₁, 12 and 13 for the circuit shown in the following figure. Si 3.7K www 13 Ge ||₁₁| +2V 4.3K www T₂ 7. A silicon diode having 200 internal resistance is used as half wave rectifier. If the applied input voltage is 50 sin100πt and load resistance is 800 Q2, then find a) Im, Idc and Irms b) Output frequency and ripple factor c) AC input and output power d) efficiency 8. 9. Differentiate zener and avalanche breakdown. 10.Draw and explain the V-I characteristics of silicon diode. 11.Design a voltage regulator using zener diode to meet the following specification; Unregulated voltage=20V, Vo=10V, load current is 0- 20mA, 12min=10mA, 12max=100mA 12. What do you mean by break region of a diode? What is Avalnche break down? 13. Explain the operation of P-N junction diode with V-I characteristics. 14.
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