pls i need her final number answer Clear my choiceFor VA-no, RL=1k), V-26mV, and using Miller approximation, consider the following given: (Round your final answer to Twodecimal places)VccR-2000RLEB=100RsVoutC-100FVina КатC=20/FCos 30fFCout=Calculate Cin at the gate of the transistor if gm = 5 mS, RD 2 ks, and CF 80 fF. (Round your final answer to 3 decimalplaces)VooT

Answered: Clear my choice For VA-no, RL=1k),…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Similar questions

For the NMOSFET in the circuit below, K = 4.00mA/V^2, VTHN = 1.00V, l = 0V^-1, and VIN = 4.00V.a. Draw the large signal model and small signal model of the circuit.
Kindly provide a CLEAR and COMPLETE solution.
In the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation.Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.
2) Using the electrical characteristics data provided for 2N7000G n-channel mosfet, determine the following: 5M i) the K value for the mosfet. ii) Sketch the Transfer characteristics show all your calculation steps clearly.
What makes this a cascode current mirror and not a cascade?
In the following problem we want to calculate an N-type MOSFET transistorparameters when body is connected to the source. The W/L = 10 for the device,and ignore channel length modulation. a)Based on triode and saturation equations that you learned in the class, plotdrain current versus drain voltage, when source is grounded and Vgs = 0.5,1, and 3V. Sweep the drain voltage from 0 V to 3 V. This plot is calledOutput characteristics of a transistor. Highlight the point where transistorsregion is switched from triode region into saturation.
[Q1] Assume there are 50 signals, each one is band-limited to 10kHz and sampled at a rate 28% over the Nyquist rate. Assuming these signals have the same voltage range, the samples of each signal are quantized with the maximum quantization error is 0.31% of the peak amplitude. The quantized samples are coded to be binary using PCM. The binary bits from each signal are multiplexed using TDM-PCM. Determine the channel bandwidth required to transmit the multiplexed signal.
2. For the SSBSC modulator shown below: (A=5, B=0.2, C=0.01) a) identify the method of single sideband suppression b) determine the equation of the signal at the output of BM1, BM2, adder c) calculate the effective current of the signal at the output of the adder if the load resistance is 75 ohms e=50sin 600πt BM1 +90 PS Oscr.,ec e=10sin 10000лt + 90 PS BM2
Q6/ A signal having bandwidth equal to 3.5 KHz is sampled, quantized and coded by a PCM system. The coded signal is then transmitted over a transmission channel of supporting a transmission rate of 50 K bits/sec. Determine the maximum signal to noise ratio that can be obtained by this system. The input signal has peak to peak value of 4 volts and r.m.s. value of 0.2 volts. (ans. = 1966.08 = 33 dB) N
Solve IB and IE
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
For an n-channel JFET having device parameters IDSS= (12 + 0.2 × 80 ) mA and VP= -8V: Sketch the transfer characteristics using shorthand method. Sketch the drain characteristics from the transfer characteristics. (You must draw 4 curves each of which corresponding to one point on the transfer characteristics curve.) Determine the maximum value of gm. Determine the value of gm at VGS= -4V.

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