Calculate the energy required for a transition from nx = ny = nz = 1 to nx = ny = 1, nz = 2 for an electron in a cubic hole of a crystal having edge length = 1Ắ
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Calculate the energy required for a transition from nx = ny = nz = 1 to nx = ny = 1, nz = 2
for an electron in a cubic hole of a crystal having edge length = 1Ắ
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- The function F(E) shown here is 10 E-Ho 0 KT -10 0.5 → F(E) a. the Fermi function, fo(E) Ob. 1 - fo(E) Oc. 1 + fo(E) Od. kT Ofo/OE Oe.- KTOfo/OEWe have a piece of Si (shown below) with dimensions 50 um x 200 um x 0.25 um. The Silicon is doped uniformly with ND = 1014 cm3. What is the resistance of the slab when measured along the length (200 um)? %3| If a light with photonic energy greater than the bandgap of Si were to be shone from the top surface such that it produces uniform hole-electron pairs Ap =An = 5E12 cm-3 throughout the slab, what would be the ratio of the illuminated conductivity vs the dark conductivity? What is the ratio of conductivity due to holes vs the conductivity due to electrons under illumination? How about in the dark? 200 NmGraph below shows the electron occupancy probability P(E) as a function of energy for Bismuth (mBi = 3.47 × 10-25 kg) at the temperature T = 0 K. What is the number of conduction electrons per unit volume for Bismuth? 1 1 2 3 4 5 6 7 8 E (ev) P(E)
- H1.View a system of two particles that do not interact with each other, where each particle can occupy three possible states, each with energy &, 2ɛ, 3E (i) Marwell-Boltzmann: Na. Configuration 1 2 3 4 S 6 7 2 9 Nader Conligation 1 2 2 + 1 2 5 6 (1) Fermi-Dirac 3 No. Configuration E AG A A B B AA A A Distinguishable 28 E AB (6) Boson: Base- Ginstein: Indistinguishable င် A A B A A 8 28 AA A A 38 A 2 A AB B A CO B A JE AA A A Energy system A A wwwww Indistinguishable We know formion follow exclusion principle. 28 38 Smarty tem 28 32 38 4E SE SE Energy system 22 48 68 38 48 SE 38 4€ SE Calculate the average energy of the system as a temperature function for the three statistics above.Problems: An electron is confined to a 1 micron thin layer of silicon. Assuming that the semiconductor can be adequately described by a one-dimensional quantum well with infinite walls, calculate the lowest possible energy within the material in units of electron volt. If the energy is interpreted as the kinetic energy of the electron, what is the corresponding electron velocity? (The effective mass of electrons in silicon is m* = 0.26 mo, where mo = 9.11 x 10-31 kg is the free electron rest mass). Draw the energy profile for the first three energy levels. Solve for the electron velocity.