Problems: An electron is confined to a 1 micron thin layer of silicon. Assuming that the semiconductor can be adequately described by a one-dimensional quantum well with infinite walls, calculate the lowest possible energy within the material in units of electron volt. If the energy is interpreted as the kinetic energy of the electron, what is the corresponding electron velocity? (The effective mass of electrons in silicon is m* = 0.26 mo, where mo = 9.11 x 10-31 kg is the free electron rest mass). Draw the energy profile for the first three energy levels. Solve for the electron velocity.

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An electron is confined to a 1 micron thin layer of silicon. Assuming that the semiconductor can be adequately described by a one-dimensional quantum well with infinite walls,
calculate the lowest possible energy within the material in units of electron volt. If the energy is interpreted as the kinetic energy of the electron, what is the corresponding
electron velocity? (The effective mass of electrons in silicon is m* = 0.26 mo, where mo = 9.11 x 10-31 kg is the free electron rest mass).
Draw the energy profile for the first three energy levels.
Solve for the electron velocity.
Transcribed Image Text:Problems: An electron is confined to a 1 micron thin layer of silicon. Assuming that the semiconductor can be adequately described by a one-dimensional quantum well with infinite walls, calculate the lowest possible energy within the material in units of electron volt. If the energy is interpreted as the kinetic energy of the electron, what is the corresponding electron velocity? (The effective mass of electrons in silicon is m* = 0.26 mo, where mo = 9.11 x 10-31 kg is the free electron rest mass). Draw the energy profile for the first three energy levels. Solve for the electron velocity.
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