Calacutate vbi for si Pn - junction with NA = lo" lem 12 and ND = 10"Vem at TE37o ke hin

Q: From fig 3 bellow, A 19.25V, 900 mW zener diode is used for providing a 19.25V stabilized supply to…

A: Given data: The value of the zener diode is Z=900 mW. The output voltage of the zener diode is…

Q: Q4) A- Si P-N junction draw current 100 m Amps. at 292.5 K, if N type doped with atom 0.8 x 10o.…

A: Given data: The diode current is I=100 mA. The donor concentration is Nd=0.8×1020 /m3. The acceptor…

Q: Which region in a transistor is highly doped. Why?

A: SOltuion: Given that which region in the transistor are doped highly and why?

Q: If the bonding energy, in terms of (r), between two ions is ( number. a) Find the repulsive and…

A: (a) The bonding energy between the two ions is given by To find the repulsive and attractive forces,…

Q: Q°: Assume ideal diode. Find the values of the labeled voltage and current. + 3 V + 3 V 5 kn 10 kn Z…

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Q: Find the minimum electron concentration in min in

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Q: - Using the equation below, which I gave you in class to calculate the donor level (i.e. the binding…

A: The final answer is attached below Explanation:

Q: the minimum value of RL to ensure that the Zener diode is in the "ON" state + 20 V IR Ο 0.18 ΚΩ Ο…

A: Given, Rs=220Ω Vs=20V For the Zener diode to remain ON during ON state the open-circuit voltage will…

Q: Determine the voltage across the silicon diode assuming the practical diode model. Write the answer…

A: Given: We take perfect diode model.

Q: Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of…

A: Given, Length l=12 mm Width w=5 mm Thickness t=1 mm Magnetic density B=0.5 wb/m2 Hall coefficient…

Q: -3 junction diode has the following parameters: ND = 102²2 m-³, = 0.02 m² /V.s, T₁=T₁=1 μs, A=1mm².…

A:

Q: 2. Calculate the number of carriers per atom in intrinsic Ge at 27°C, when effective density of…

A: Given : ne=4.3×1023m-3, nh=8.85×1024m-3, T=300K   The energy bandgap of Ge at T=300K is known to be…

Q: 11. Number of free electrons in copper is 8E28/m³ Calculate T for Cu...and lat 300K Answer: 26 fs

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Q: A transistor has: three pn junction two pn junction one pn junction four pn junction

A: A transistor consists of 2 pn junction diode  1st junction is formed between emitter and base. 2nd…

Q: Determine Icsan for the transistor shown in the figure below. What is the value of Is necessary to…

A: Given is  VCC =5 VRC =10 K ohm βDC =150RB =1 M ohm find : IB (sat) and VIN (min)

Q: B/ what are effects impurity atom is added to intrinsic semi-conductor on energy gap.

A:

Q: a) Which of these transistor structures, n-channel JFET, E-MOSFET and D- MOSFET can be operated in…

A: A D-MOSFET can operate in both depletion and enhancement model and E-MOSFET can operate in…

Q: Explain why a p-n junction possesses capacitance.

A: Just like a capacitor stores electric charge in the form of electric field, a p-n junction has…

Q: The electrons in the conduction band are known as?

A: To Explain: What are the electrons in the conduction band called.

Q: 1) An abrupt Si p-n* junction of cross sectional area 10 cm² is operated at 300K and has the…

A: Given Cross-sectional area = 10-4 cm2 Temperature             = 300 K Na…

Q: can act sometimes as a conductor and sometimes as an insultor. O Insulator O Conductor O…

A: Semiconductors are materials that have electric conductivity in between conductors (usually metals)…

Q: Assume you are to create n*pn transistor using n- and p-typed doped silicon with the following…

A: e= electronic charge = 1.602 x 10-19 C kT=Voltage corresponding To room temperature = VT= 25 m. eV…

Q: Write a conclusion about PN Junction

A: A PN junction is an interface between two material types p and n in a semiconductor. The p-side is…

Q: IR Rs Vi=16V Rz VL =12V a 14 the load current Iz varies between 0-2 00 m A , find the values of Rs…

A: Given: The input voltage is given as Vi = 16 V The voltage across the load resistor VL = 12 V The…

Q: ermine ID and V₁ for

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Q: What is PN Junction diod? Explain the formation of depletion region in PN Junction diode.

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Q: Sketch the diode load line on the characteristics curves given in Fig b., and determine operating…

A: For the analysis of characteristics curve of a non-linear device such as diode, a straight line is…

Q: A semiconductor is struck by light of slowly increasing frequency and begins to conduct when the…

A:

Q: •) Por a silicon doped with Np = 3x10¹6 cm-3 Na = 3x10 16 cm 3, at room room temperature a) what are…

A: Number of holes doped  in siliconMeans p= 3×10^16/Cm^3 and number of donor n= 3×10^16/cm^3

Q: PN-junction diode works as an insulator, when connected in?

A: When the PN junction diode is connected in reverse bias no current flows and works as an insulator.…

Q: äböi For the circuit shown below, calculate Vout if the saturation current for the * diode is 50nA,…

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Q: 50 V- 49.7 mA 49.3 mA COA R₁ - 1kQ www Figure 16-1 What is the current through R1 in Figure 16-1(c)…

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Q: Determine the peak value of the output voltage If Vpint=240V. if the turns ratio is 8:5 for…

A: Given that the peak input voltage is Vpin=240 V . The turns ratio of the transformer in the…

Q: (c) Draw diagrams showing how a semiconductor diode functions.

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Q: What is the current through the zener diode? Where Vin=20v Vz=10v. + VIN ā R ww 560 Ω

A:

Q: QI- Given a silicon with N, = 1.04 × 1019 cm-³ at T= 300 K and the Fermi energy is 0.27 eV above the…

A:

Q: 4.6875x10^18 J, is:

A: The bond gap energy and temperature is expressed as, Egr=Eg0-αT2T+β

Q: A junction employs Nd = 5 * 1017 cm-3 and Na = 4 * 1016 cm-3 . Assume ni = 1.5 * 1010 cm-3 a)…

A: Denote the donor atoms concentration with Nd & the acceptor atoms concentration with Na. Here ni…