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b) Microelectronic devices are fabricated by forming silicon thin films onto a heated plate as shown in Figure 2. The thin film of solid silicon, Si serves as a semiconductor. Silicon thin films are commonly formed by the chemical vapor deposition of silane vapor, SiH4. The reaction occurs only at the surface of growing Si thin film. This surface reaction is usually carried out at very low pressure 100 Pa and high temperature 900K. Furthermore, at high temperature, the surface reaction is very rapid. Derive an expression for the flux of SiH4 through diffusion path 0 ≤ z ≥ 8 and justify three (3) assumptions required for the derivation. The chemical reaction is:

b) Microelectronic devices are fabricated by forming silicon thin films onto a heated plate as shown in Figure 2. The thin film of solid silicon, Si serves as a semiconductor. Silicon thin films are commonly formed by the chemical vapor deposition of silane vapor, SiH4. The reaction occurs only at the surface of growing Si thin film. This surface reaction is usually carried out at very low pressure 100 Pa and high temperature 900K. Furthermore, at high temperature, the surface reaction is very rapid. Derive an expression for the flux of SiH4 through diffusion path 0 ≤ z ≥ 8 and justify three (3) assumptions required for the derivation. The chemical reaction is:

Introduction to Chemical Engineering Thermodynamics
Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Chapter1: Introduction
Section: Chapter Questions
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b) Microelectronic devices are fabricated by forming silicon thin films onto a heated plate as shown in Figure 2. The thin film of solid silicon, Si serves as a semiconductor. Silicon thin films are commonly formed by the chemical vapor deposition of silane vapor, SiH4. The reaction occurs only at the surface of growing Si thin film. This surface reaction is usually carried out at very low pressure 100 Pa and high temperature 900K. Furthermore, at high temperature, the surface reaction is very rapid. Derive an expression for the flux of SiH4 through diffusion path 0 ≤ z ≥ 8 and justify three (3) assumptions required for the derivation. The chemical reaction is:
Transcribed Image Text:b) Microelectronic devices are fabricated by forming silicon thin films onto a heated plate as shown in Figure 2. The thin film of solid silicon, Si serves as a semiconductor. Silicon thin films are commonly formed by the chemical vapor deposition of silane vapor, SiH4. The reaction occurs only at the surface of growing Si thin film. This surface reaction is usually carried out at very low pressure 100 Pa and high temperature 900K. Furthermore, at high temperature, the surface reaction is very rapid. Derive an expression for the flux of SiH4 through diffusion path 0 ≤ z ≥ 8 and justify three (3) assumptions required for the derivation. The chemical reaction is:
SiH vapor + H₂ gas SiH4 (g) → Si(s) + 2H₂(g) SiH Diffuser H₂ Si thin film Heated plate Figure 2: Chemical vapor deposition of SiH4 To vacuum z=0 Z=8
Transcribed Image Text:SiH vapor + H₂ gas SiH4 (g) → Si(s) + 2H₂(g) SiH Diffuser H₂ Si thin film Heated plate Figure 2: Chemical vapor deposition of SiH4 To vacuum z=0 Z=8
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