At 300 K a very pure sample of Ge has an electric resistivity of 3.9 Ω∙m. The mobility of electrons and holes in the sample are 0.38 m2/Vs and 0.18 m2/Vs, respectively. (a) Calculate the intrinsic carrier density and band gap of Ge (at room temperature), given (me* mh*)⁄(me2 )=0.0155. (b) The sample is then doped with 1022 m-3 boron. What are the concentration of electrons and holes, and what is the new resistivity of the sample? (c) Where is the chemical potential of the doped sample?
At 300 K a very pure sample of Ge has an electric resistivity of 3.9 Ω∙m. The mobility of electrons and holes in the sample are 0.38 m2/Vs and 0.18 m2/Vs, respectively. (a) Calculate the intrinsic carrier density and band gap of Ge (at room temperature), given (me* mh*)⁄(me2 )=0.0155. (b) The sample is then doped with 1022 m-3 boron. What are the concentration of electrons and holes, and what is the new resistivity of the sample? (c) Where is the chemical potential of the doped sample?
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At 300 K a very pure sample of Ge has an electric resistivity of 3.9 Ω∙m. The mobility of electrons and holes in the sample are 0.38 m2/Vs and 0.18 m2/Vs, respectively.
(a) Calculate the intrinsic carrier density and band gap of Ge (at room temperature), given (me* mh*)⁄(me2 )=0.0155.
(b) The sample is then doped with 1022 m-3 boron. What are the concentration of electrons and holes, and what is the new resistivity of the sample?
(c) Where is the chemical potential of the doped sample?
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