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Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.005 cm, w-0.05 cm and L=0.5 cm); I; =5 mA, V-6.25 V, and Bz=5x10-2 Tesla, VH =-6.5 mV, then the electron carrier mobility (cm?/V.S) is... 2200 O 2020 O 2083 2100

Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.005 cm, w-0.05 cm and L=0.5 cm); I; =5 mA, V-6.25 V, and Bz=5x10-2 Tesla, VH =-6.5 mV, then the electron carrier mobility (cm?/V.S) is... 2200 O 2020 O 2083 2100

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.005 cm, w=0.05 cm and L=0.5 cm); Ix =5 mA, V,-6.25 V, and Bz=5x10-2 Tesla, VH =-6.5 mV, then the electron carrier mobility (cm?/V.S) is... 2200 2020 2083 O 2100
Transcribed Image Text:Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters: Geometry (d= 0.005 cm, w=0.05 cm and L=0.5 cm); Ix =5 mA, V,-6.25 V, and Bz=5x10-2 Tesla, VH =-6.5 mV, then the electron carrier mobility (cm?/V.S) is... 2200 2020 2083 O 2100
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