Assume you are to create n'pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 10" /cm, 6.2/cm?, and 5 10"/cm, for emitter, base and collector regions, respectively. You also know L, = 10 um, L, = 4 um, H, = 1600 cm/Vs, H, = 600 cm/vs, n, = 1,5 1010 1/cm', q = 1,602 10-1" C, e, = 12, e, = 8,85 1012 F/m, V, = 25 mv. What is the minimum Vce for operation in active mode assuming hye = B is very large?
Assume you are to create n'pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 10" /cm, 6.2/cm?, and 5 10"/cm, for emitter, base and collector regions, respectively. You also know L, = 10 um, L, = 4 um, H, = 1600 cm/Vs, H, = 600 cm/vs, n, = 1,5 1010 1/cm', q = 1,602 10-1" C, e, = 12, e, = 8,85 1012 F/m, V, = 25 mv. What is the minimum Vce for operation in active mode assuming hye = B is very large?
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Assume you are to create n+pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm3, 6.2/cm3, and 5 1016/cm3, for emitter, base and collector regions, respectively. You also know Ln = 10 μm, Lp = 4 μm, μn = 1600 cm2/Vs, μp = 600 cm2/Vs, ni = 1,5 1010 1/cm3, q = 1,602 10-19 C, er = 12, eo = 8,85 10-12 F/m, VT = 25 mV. What is the minimum VCE for operation in active mode assuming hFE = β is very large?
Transcribed Image Text:Assume you are to create n'pn transistor using n- and p-typed doped silicon with the following doping concentrations, 3 1018 /cm,
6.2/cm?, and 5 10"/cm?, for emitter, base and collector regions, respectively. You also know L, = 10 um, L, = 4 um, H, = 1600
cm/Vs, H, = 600 cmNs, n; = 1,5 1010 1/cm', q = 1,602 10-19 C, e, = 12, e, = 8,85 10:12 F/m, Vr = 25 mv. What is the minimum
Vee for operation in active mode assuming he = B is very large?
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