Answered: Are there more electrons at the bottom… | bartleby

Related questions

Question

Are there more electrons at the bottom or in the middle of the conduction band of a semiconductor?

Expert Solution

Step 1

As we know that the charges at the top of the band have highly energy and in the bottom electron have low energy.

Trending now

This is a popular solution!

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Blurred answer

Similar questions

electron drops from conduction band minimum to top of valence band in GaP, a direct bandgap semiconductor with Eg=2.3eV. what kind of photon is emitted?
It is true that one can force a polished flat end of a p type silicon to a flat end of an n type silicon to form a good p-n junction? Why?
A region of N-type semiconductor doped by Nd=10^15 cm^-3 is fully depleted of both majority and minority carriers by an external electric field. Assuming that the concentration of electron-hole pairs that is generated per unit time does not change when the semiconductor is depleted, determine the effective generation rate if the semiconductor is (a) Si (ni = 1.02 × 1010 cm-3) and (b) GaAs (ni = 2.1 × 106 cm-3). The minority-carrier lifetime is 1 μs in both cases.
Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)
Question 2: Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. A researcher has grown compositionally dependent In1-xGaxAs films on GaAs. What spectroscopy technique will you to determine the compositions of In1-xGaxAs films? Explain your answer. What specific edges will you be targeting and why? (4)