An n-type Si sample has 1.0x1017 donor atoms/cm3. The sample has bulk recombination of 1.0x1015 centers/cm3, and it has electron and hole capture cross-sections of 1x10-15 cm2. Part of this sample was doped with 3x1017 acceptor atoms/cm3 to form a p-n junction.Calculate the majority and minority carrier concentrations for the n-side, nn0 and pn0.Calculate the majority and minority carrier concentrations for the n-side, pp0 and np0.Calculate Vbi.Calculate W.Calculate xn0 and xpo.Calculate the maximum electric field Em.Calculate the junction capacitance CJ per cm2.

Step 1: Step 2: Step 3: Step 4:

Answered: An n-type Si sample has 1.0x1017 donor…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

See similar textbooks

Related questions

Question

An n-type Si sample has 1.0x10¹⁷ donor atoms/cm³. The sample has bulk recombination of 1.0x10¹⁵ centers/cm³, and it has electron and hole capture cross-sections of 1x10^-15 cm². Part of this sample was doped with 3x10¹⁷ acceptor atoms/cm³ to form a p-n junction.

Calculate the majority and minority carrier concentrations for the n-side, n_n0 and p_n0.
Calculate the majority and minority carrier concentrations for the n-side, p_p0 and n_p0.
Calculate V_bi.
Calculate W.
Calculate x_n0 and x_po.
Calculate the maximum electric field E_m.
Calculate the junction capacitance C_J per cm².