An intrinsic silicon semiconductor is uniformly doped with acceptors to a level of 2x1017 cm³. At room temperature, the electron concentration in this semiconductor is found to be 5x102 cm-3. What is the intrinsic carrier concentration of this semiconductor at room temperature and describe qualitatively how would the electron concentration change if the temperature increased slightly? 25 52
An intrinsic silicon semiconductor is uniformly doped with acceptors to a level of 2x1017 cm³. At room temperature, the electron concentration in this semiconductor is found to be 5x102 cm-3. What is the intrinsic carrier concentration of this semiconductor at room temperature and describe qualitatively how would the electron concentration change if the temperature increased slightly? 25 52
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Transcribed Image Text:A20. An intrinsic silicon semiconductor is uniformly doped with acceptors to a level
of 2x1017 cm-³. At room temperature, the electron concentration in this
semiconductor is found to be 5x10² cm-3. What is the intrinsic carrier
concentration of this semiconductor at room temperature and describe
qualitatively how would the electron concentration change if the temperature
increased slightly?
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