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a. Semiconductor intrinsic carrier concentration increases with temperature. b. At the same room temperature condition, the ratio between the electron diffusion coefficient and the electron mobility varies from material to material. c. Avalanche breakdown in pn junctions is mostly due to the large tunneling current associated with high field and high doping concentration.

a. Semiconductor intrinsic carrier concentration increases with temperature. b. At the same room temperature condition, the ratio between the electron diffusion coefficient and the electron mobility varies from material to material. c. Avalanche breakdown in pn junctions is mostly due to the large tunneling current associated with high field and high doping concentration.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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State true or false for all the given statement with a line of explanation

a. Semiconductor intrinsic carrier concentration increases with temperature. b. At the same room temperature condition, the ratio between the electron diffusion coefficient and the electron mobility varies from material to material. c. Avalanche breakdown in pn junctions is mostly due to the large tunneling current associated with high field and high doping concentration. d. For the generation-recombination process in a forward-biased pn junction, generation process dominates recombination process. e. For a MOS structure with n-type Si semiconductor, it can form an accumulation type ohmic contact if the metal work function is greater than semiconductor work function. f. For a n-channel depletion mode MOSFET, the channel is inverted even with the gate-to-source voltage is zero.
Transcribed Image Text:a. Semiconductor intrinsic carrier concentration increases with temperature. b. At the same room temperature condition, the ratio between the electron diffusion coefficient and the electron mobility varies from material to material. c. Avalanche breakdown in pn junctions is mostly due to the large tunneling current associated with high field and high doping concentration. d. For the generation-recombination process in a forward-biased pn junction, generation process dominates recombination process. e. For a MOS structure with n-type Si semiconductor, it can form an accumulation type ohmic contact if the metal work function is greater than semiconductor work function. f. For a n-channel depletion mode MOSFET, the channel is inverted even with the gate-to-source voltage is zero.
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