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a. The alpha a, of a BJT transistor has a lower value in forward active mode than in inverse active. TIF TIF b. The majority carriers in a p-type material are electrons. c. The voltage at the gate of the MOSFET is only related to the potential dropped across the silicon. TIF d. For either PMOS or NMOS, the capacitance reduces in depletion mode. T/ F e. In accumulation mode there are free charges (either n or p) in the channel of the MOSFET. T / F f. In accumulation mode the MOSFET is able to drive a current. T / F g. The emitter in an PNP transistor is doped with acceptors. TIF h. A higher doping concentration in the source/drain of a MOSFET increases the threshold voltage. TIF i. The currents in a MOSFET in on mode varies exponentially with input voltages. T/F j. The electric field in a PN junction points in the direction of the N-doped section. TIF k. Assume that in a given BJT transistor the collector doping is reduced. The current lo is slightly changed. T / F 1. If the oxide thickness reduces, the magnitude of MOSFET threshold voltage generally reduces. T I F

a. The alpha a, of a BJT transistor has a lower value in forward active mode than in inverse active. TIF TIF b. The majority carriers in a p-type material are electrons. c. The voltage at the gate of the MOSFET is only related to the potential dropped across the silicon. TIF d. For either PMOS or NMOS, the capacitance reduces in depletion mode. T/ F e. In accumulation mode there are free charges (either n or p) in the channel of the MOSFET. T / F f. In accumulation mode the MOSFET is able to drive a current. T / F g. The emitter in an PNP transistor is doped with acceptors. TIF h. A higher doping concentration in the source/drain of a MOSFET increases the threshold voltage. TIF i. The currents in a MOSFET in on mode varies exponentially with input voltages. T/F j. The electric field in a PN junction points in the direction of the N-doped section. TIF k. Assume that in a given BJT transistor the collector doping is reduced. The current lo is slightly changed. T / F 1. If the oxide thickness reduces, the magnitude of MOSFET threshold voltage generally reduces. T I F

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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a. The alpha a, of a BJT transistor has a lower value in forward active mode than in inverse active. TIF TIF b. The majority carriers in a p-type material are electrons. c. The voltage at the gate of the MOSFET is only related to the potential dropped across the silicon. TIF d. For either PMOS or NMOS, the capacitance reduces in depletion mode. T/ F e. In accumulation mode there are free charges (either n or p) in the channel of the MOSFET. T / F f. In accumulation mode the MOSFET is able to drive a current. T / F g. The emitter in an PNP transistor is doped with acceptors. TIF h. A higher doping concentration in the source/drain of a MOSFET increases the threshold voltage. TIF i. The currents in a MOSFET in on mode varies exponentially with input voltages. T/F j. The electric field in a PN junction points in the direction of the N-doped section. TIF k. Assume that in a given BJT transistor the collector doping is reduced. The current lb is slightly changed. T / F 1. If the oxide thickness reduces, the magnitude of MOSFET threshold voltage generally reduces. T I F
Transcribed Image Text:a. The alpha a, of a BJT transistor has a lower value in forward active mode than in inverse active. TIF TIF b. The majority carriers in a p-type material are electrons. c. The voltage at the gate of the MOSFET is only related to the potential dropped across the silicon. TIF d. For either PMOS or NMOS, the capacitance reduces in depletion mode. T/ F e. In accumulation mode there are free charges (either n or p) in the channel of the MOSFET. T / F f. In accumulation mode the MOSFET is able to drive a current. T / F g. The emitter in an PNP transistor is doped with acceptors. TIF h. A higher doping concentration in the source/drain of a MOSFET increases the threshold voltage. TIF i. The currents in a MOSFET in on mode varies exponentially with input voltages. T/F j. The electric field in a PN junction points in the direction of the N-doped section. TIF k. Assume that in a given BJT transistor the collector doping is reduced. The current lb is slightly changed. T / F 1. If the oxide thickness reduces, the magnitude of MOSFET threshold voltage generally reduces. T I F
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