(a) A small region of an impure silicon crystal with dimensions 1.25 × 10-6 m ×10-3x10-3 m has only the ions (with charge +1.6 10-19 C) present with a volume density of1025/m³. The rest of the crystal volume contains equal densities of electrons (with charge-1.6 x 10-19 C) and positive ions. Find the net total charge of the crystal.

For the region which contains only the ions, the volume density of charge will be…

A small region of an impure silicon crystal with dimensions 1.25 × 10-6 m ×10-3 m ×10-3 m has only the ions (with charge +1.6 10-19 C) present with a volume density of 10²5/m³. The rest of the crystal volume contains equal densities of electrons (with charge -1.6 × 10¬19 C) and positive ions. Find the net total charge of the crystal.

A small region of an impure silicon crystal with dimensions 1.25 × 10-6 m ×10-3 m ×10-3 m has only the ions (with charge +1.6 10-19 C) present with a volume density of 10²5/m³. The rest of the crystal volume contains equal densities of electrons (with charge -1.6 × 10¬19 C) and positive ions. Find the net total charge of the crystal.

Delmar's Standard Textbook Of Electricity

7th Edition

ISBN:9781337900348

Author:Stephen L. Herman

Publisher:Stephen L. Herman

Chapter1: Atomic Structure

Section: Chapter Questions

Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?

See similar textbooks

Related questions

Q: Determine the hole concentration in gallium arsenide at T = 300K given an electron concentration of…

A: For gallium arsenide -

Q: In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron…

Q: Consider an p-type silicon for which the dopant concentration ND 1018/cm3 Find the electron and hole…

A: In this question, Choose the correct options If p type silicon dopant concentration ND = 1018 /cm3…

Q: Assume each diode to be OFF when V₂ ≤ 0.7V and ON when VĎ >0.7V. Find iD1, İD2, İD³, and vō in each…

A: Given:a circuit,when , the diode is off. when , the diode is on. Find:iD1, iD2, iD3 and v0.

Q: Consider an n-type silicon for which the dopant concentration ND= 1020/cm3. Find the electron and…

A: Given: Nd=1020/cm3 T=350 K ni=Intrinsic Concentration of Si=1.5*1010/cm3

Q: 2.27 A diode is made by using an n-type Si substrate (Np = 4.0 × 1015 cm-3) and then adding…

A: We need to find electron and concentration in p side of a diode .

Q: The carrier mobility differs between electrons and holes. In silicon, the difference is: Hole…

A: The carrier mobility differs between electrons and holes. In silicon, the difference is:

Q: VI R ww www R VB D₁ D₂ ww R www R Vo

A: Given Circuit: Given data: VB=1 V Ideal diodes To determine: Relation between input and output…

Q: In an p n junction, the width of the area devoid of charge is wider on there isn't enough…

A: The question is about pn junction diode.

Q: A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015…

Q: A small region of an impure silicon crystal with dimensions. 1.25 × 10-6 mx 10-3 m x 10-3 m has only…

A: The given data is shown below:

Q: A silicon sample is doped with NA = 5.02x10¹6 cm-3 and ND = 5.01x10¹6 cm-³. Determine, at 300 K, the…

Q: A silicon crystal having a cross-sectional area of 0.002 cm² and a length of 0.01 cm is connected…

Q: A diode has IS = 10−17 A and n = 1.05. (a) What is the diode voltage if the diode current is 70 μA?…

A: Hello. Since your question has multiple sub-parts, we will solve the first three sub-parts for you.…

Q: At a thermal voltage of 26mV, find the absolute temperature of a common component like a diode in an…

A: The solution is given below

Q: None

A: Step 1: Step 2: Step 3: Step 4:

Q: Determine the n-type doping concentration to meet the following specifications for a Si p–n…

A: The concentration on the p side, The electric field,The reverse bias voltage, The temperature is 300…

Q: 2. A diode has Iş = 10 pA. At Vp = 0.625 V and T= 300 °K, what is Ip? %3D

A: Given data, Is=10 pAVD=0.625T=3000K

Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

(a) A small region of an impure silicon crystal with dimensions 1.25 × 10-6 m ×10-3
x10-3 m has only the ions (with charge +1.6 10-19 C) present with a volume density of
1025/m³. The rest of the crystal volume contains equal densities of electrons (with charge
-1.6 x 10-19 C) and positive ions. Find the net total charge of the crystal.

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Types of Semiconductor Material and Its Energy Band Analysis

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.

Similar questions

Consider silicon at T =300 k is doped with donor impurities No = 2.8 × 101⁹ atoms / cm3 and Nc -2.8×101⁹ cm-³ 1. Draw the energy band diagram for this semiconductor and label all the energy levels? 2. What is the type of semiconductor?
A silicon crystal having a cross-sectional area of 0.001cm and a length of 10'cm is connected at it's ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?
Consider an p-type silicon for which the dopant concentration ND = 1018/cm3. Find the electron and hole concentrations at T = 350 K. electron = 1018/cm³ & holes= 2.25 × 102/cm³ electron = 2.25 x 102/cm³ & holes= 2.25 x 104/cm3 electron = 17.22 × 104 /cm³ & holes= 1018/cm³ 3 electron 1018/cm³ & holes= 3 %3D 1018/cm3
Silicon is doped with 6 × 1017 boron atoms/cm3 and 2×1017 phosphorusatoms/cm3 (a)Is this n-or p-type silicon? (b) What are the hole and electron concentrations at room temperature?
A diode has IS = 0.2 nA and n = 1. What is the diode current if the diode voltage is 0.675 V?
A silicon crystal having a cross-sectional area of 0.002 cm² and a length of 0.01 cm is connected across a 20-V battery. At T = 300 K, a current of 0.25 A in the semiconductor is required. Calculate the required conductivity and use that to determine the density of donor atoms to be added to achieve this conductivity. Nd= 2.31 X 1014 cm-3 Nd = 3.09 X 1014 cm -3 Nd= 2.89 X 1014 cm-3 Nd=4.63 X 10¹4 cm-3
From the diode circuit shown below, If E-40 V and RL=8002, determine the current supplied from the battery, the voltage across the load resistance, and the voltage across diode D2 if all the diodes are silicon with an internal resistance of 1 02. E= D₁ Z D. RL a. The Current supplied by battery is D₂ D3
Consider an n-type silicon for which the dopant concentration ND = 1020/cm³. Find the electron and hole concentrations at T= 350 K. 20/cm3 102/cm3 electron = 10 & holes= 17.22 x electron 17.25 x 102/cm3 & holes= 12.25 x 104/cm³ electron 2.25 x 104/cm3 & holes= 1016/cm 3 electron 1020/cm3 & holes= 102/cm3
If the current across the diode here in the figure is 0, does that mean the voltage across the resistance (10 ohms) is 0 because of V=IR or it is 5V?
A pn diode is a semiconductor device in which, unlike in a metal, the current flow is due not only to negative electron charge flow but also due to positive charges. The positive charges are usually referred to as holes, as they are really "deficit" in the negative charge distribution. The semiconduction material (usually silicon with Er = 11 or gallium arsenide with e, impurities are added. Initially, the physically important region on the p side contains a density p+ of positive charges per unit volume, whereas the n region contains a negative charge density p-. When they are brought in contact, a static equilibrium follows in which a surplus of negative charges will accumulate in the (thin) p region, and a surplus of positive charges will accumulate in the (much thicker) n region. These two layers produce an electric field similar to that of a capacitor with infinite parallel plates. In equilibrium, the total number of positive charges in the n region is equal to the number of…
Find the resistivity of (a) intrinsic silicon and (b) n-type silicon with No = 10 /cm and using the following values: Hn = 1350cm2/Vs, H = 480cm /Vs, n, = 1.5x101/cm, q=1.6x10 Coulombs. %3D %3D %3D
Describe with the aid of energy level diagrams the difference between a solid semiconductor and a solid metal.