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In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm³ K³/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D

In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm³ K³/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm3 K3/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D %3D
Transcribed Image Text:In a p-type doped Si crystal with a doping of 1018 /cm³ calculate the hole and electron concentration at 300K and 400K. Use the following for the calculations B=7.3 x 1015 /cm3 K3/2, Eg = 1.12 eV, kg = 8.62 x 10-5 eV/K. %3D %3D
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