HW4: Problem 1. Using S8MCQ rectifier diodes (a real diode), design a bridge rectifier circuit to convert 120 V rms (60 Hz) to a DC voltage of Vp-10 V (maximum voltage) and ripple voltage of Vr=0.25 V when it delivers 0.25 A to a load. By designing, it means that you have to calculate the value for the capacitor and find what should be the ratio of the primary to secondary winding of the transformer. transformer ac line 120 V (rms) 60 Hz v vi Diode rectifier m m₂ Filter Load

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HW4: Problem 1. Using S8MCQ rectifier diodes (a real diode), design a bridge rectifier circuit to convert
120 V rms (60 Hz) to a DC voltage of Vp-10 V (maximum voltage) and ripple voltage of Vr=0.25 V when it
delivers 0.25 A to a load.
By designing, it means that you have to calculate the value for the capacitor and find what should be the
ratio of the primary to secondary winding of the transformer.
transformer
ac line
120 V (rms).
60 Hz
US
Vi
vi vi
Diode
rectifier
my
Filter
Vo
Load
Transcribed Image Text:HW4: Problem 1. Using S8MCQ rectifier diodes (a real diode), design a bridge rectifier circuit to convert 120 V rms (60 Hz) to a DC voltage of Vp-10 V (maximum voltage) and ripple voltage of Vr=0.25 V when it delivers 0.25 A to a load. By designing, it means that you have to calculate the value for the capacitor and find what should be the ratio of the primary to secondary winding of the transformer. transformer ac line 120 V (rms). 60 Hz US Vi vi vi Diode rectifier my Filter Vo Load
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Thank you for your help so far.

The original question from my homework is the 1st attached image, but I just want to know 2 things.

1) How to calculate iD av and iD max?

And if you're feeling extra nice;

2) What are iD av and iD max called on a datasheet? I'm looking at the data sheet and I dont see any currents related to "D". I attached a 2nd picture of the datasheet I'm looking at.

If the 2nd question is too much for 1 solution on this site, please just answer my 1st question and I'll follow up with my 2nd. I don't want to type this whole question again, lol.

Thanks again!

DIODES.
RPORATED
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
Non-Repetitive Peak Forward Surge Current, 1.0ms
Single Half Sine-Wave Superimposed on Rated Load
1²t Rating for Fusing (t < 8.3ms)
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Terminal (Note 5)
Operating and Storage Temperature Range
@ TT= +75°C
Characteristic
Minimum Reverse Breakdown Voltage
Maximum Forward Voltage
Peak Reverse Current
Typical Reverse Recovery Time (Note 6)
Typical Total Capacitance (Note 7)
@IR = 10μA
@ IF = 8.0A
Symbol
VRRM
VRWM
VR
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Symbol
V(BR)R
VFM
@TA = +25°C
@TA = +125°C
VR(RMS)
lo
IFSM
IFSM
1²t
Symbol
RØJT
TJ, TSTG
IRM
tRR
CT
Value
1,000
700
8.0
200
450
166
Value
10
-65 to +150
Value
1,000
0.985
10
250
2,700
45
Notes: 5. Thermal resistance junction to terminal, device mounted on 100.5mm x 102.5mm x 1.7mm Cu plate heatsink.
6. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
S8MCQ
Unit
V
V
A
A
A
A²S
Unit
°C/W
°C
Unit
V
V
μA
ns
pF
Transcribed Image Text:DIODES. RPORATED Maximum Ratings (@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load Non-Repetitive Peak Forward Surge Current, 1.0ms Single Half Sine-Wave Superimposed on Rated Load 1²t Rating for Fusing (t < 8.3ms) Thermal Characteristics Characteristic Typical Thermal Resistance, Junction to Terminal (Note 5) Operating and Storage Temperature Range @ TT= +75°C Characteristic Minimum Reverse Breakdown Voltage Maximum Forward Voltage Peak Reverse Current Typical Reverse Recovery Time (Note 6) Typical Total Capacitance (Note 7) @IR = 10μA @ IF = 8.0A Symbol VRRM VRWM VR Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Symbol V(BR)R VFM @TA = +25°C @TA = +125°C VR(RMS) lo IFSM IFSM 1²t Symbol RØJT TJ, TSTG IRM tRR CT Value 1,000 700 8.0 200 450 166 Value 10 -65 to +150 Value 1,000 0.985 10 250 2,700 45 Notes: 5. Thermal resistance junction to terminal, device mounted on 100.5mm x 102.5mm x 1.7mm Cu plate heatsink. 6. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A. 7. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. S8MCQ Unit V V A A A A²S Unit °C/W °C Unit V V μA ns pF
HW4: Problem 2. Based on your design in Problem 1, check if S8MCQ diode is a suitable choice based on
the calculated ip av and ip max. Search for the S8MCQ datasheet online and download it. On the datasheet
circle around the values related to iD av and iD max. Submit the datasheet with your homework.
Transcribed Image Text:HW4: Problem 2. Based on your design in Problem 1, check if S8MCQ diode is a suitable choice based on the calculated ip av and ip max. Search for the S8MCQ datasheet online and download it. On the datasheet circle around the values related to iD av and iD max. Submit the datasheet with your homework.
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