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A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015 cm-3. The minority carrier lifetime is found to be 40 us. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 %3D OG = 1.44 X 107 s-1 OG = 1.13 X 108 5-1 %3D

A p-type silicon sample in a non-equilibrium state has a majority carrier concentration po = 1015 cm-3. The minority carrier lifetime is found to be 40 us. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 %3D OG = 1.44 X 107 s-1 OG = 1.13 X 108 5-1 %3D

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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A p-type silicon sample in a non-equilibrium state has a majority carrier concentration Po = 1015 cm-3. The minority carrier lifetime is found to be 40 ps. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 OG = 1.44 X 107 s1 %3D OG = 1.13 X 108 s1
Transcribed Image Text:A p-type silicon sample in a non-equilibrium state has a majority carrier concentration Po = 1015 cm-3. The minority carrier lifetime is found to be 40 ps. What is the generation rate of excess carriers? OG = 5.63 X 10° s-1 OG = 2.88 X 108 s-1 OG = 1.44 X 107 s1 %3D OG = 1.13 X 108 s1
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