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A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C.

A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C.

College Physics
College Physics
11th Edition
ISBN:9781305952300
Author:Raymond A. Serway, Chris Vuille
Publisher:Raymond A. Serway, Chris Vuille
Chapter1: Units, Trigonometry. And Vectors
Section: Chapter Questions
Problem 1CQ: Estimate the order of magnitude of the length, in meters, of each of the following; (a) a mouse, (b)...
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  1. A silicon PN diode has reverse saturation current of 20 µA at temperature 200 Calculate its reverse saturation current at 600C.
8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
Transcribed Image Text:8. Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I-26mA.given the mean life time of hole is 20uS at T-300K 9. Design a n-section or CLC filter for a full wave rectifier with the values of output dc voltage of 10 V and a load current of 150 mA and to have a ripple factor of 1 %. 10. A silicon PN diode has reverse saturation current of 20 µA at temperature 20°C. Calculate its reverse saturation current at 60°C. AwM
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