Determine the amount of arsenic that must be combined with 1 kg of gallium to produce a p-type semiconductor with an electrical conductivity of 500 ohm21 · cm21 at 25°C. The lattice parameter of GaAs is about 5.65 Å, and GaAs has the zincblende structure.
Determine the amount of arsenic that must be combined with 1 kg of gallium to produce a p-type semiconductor with an electrical conductivity of 500 ohm21 · cm21 at 25°C. The lattice parameter of GaAs is about 5.65 Å, and GaAs has the zincblende structure.
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Determine the amount of arsenic that must be combined with 1 kg of gallium to produce a p-type semiconductor with an electrical conductivity of 500 ohm21 · cm21 at 25°C. The lattice parameter of GaAs is about 5.65 Å, and GaAs has the zincblende structure.
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