A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10 Q.cm. If an accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per 10 Si atoms, find new resistivity then draw EBD. (For Si there is 5x10² atom /cm ,D,=13 cm/sec and D,=34 cm/sec)

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A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an
accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per
10
Si atoms, find new resistivity then draw EBD. (For Si there is 5×10²² atom /cm³ ,D,=13
cm/sec and D=34 cm/sec)
Transcribed Image Text:A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per 10 Si atoms, find new resistivity then draw EBD. (For Si there is 5×10²² atom /cm³ ,D,=13 cm/sec and D=34 cm/sec)
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