A PN diode conducting 1 mA of current has an ohmic contact of area 0.08 μm² and surface density of 1 × 1020 cm³. (a) What specific contact resistance can be allowed if the voltage drop at the ohmic contact is to be limited to 50 mV? (b) Using Eq. (4.21.7), estimate the Bn that is allowed. Is that the maximum or minimum allowable Bn? (c) Repeat (b), but this time use Fig. 4-46 to estimate Bn. (Fig. 4-46 is based on a more detailed model than Eq. 4.21.7)

A PN diode conducting 1 mA of current has an ohmic contact of area 0.08 μm² and surface density of 1 × 1020 cm³. (a) What specific contact resistance can be allowed if the voltage drop at the ohmic contact is to be limited to 50 mV? (b) Using Eq. (4.21.7), estimate the Bn that is allowed. Is that the maximum or minimum allowable Bn? (c) Repeat (b), but this time use Fig. 4-46 to estimate Bn. (Fig. 4-46 is based on a more detailed model than Eq. 4.21.7)

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Similar questions

Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OV
Current measured in the circuit in the shape created using the ideal diode model .....is. Please select one: a. 0.87 mA b. 1.2 mA c. 0.80 mA d. 0.73 mA
24 A M0-volt forwurd voltage is applied to a silicon diode in series with a load of 3 k2. Draw the de kud line. What is the slope of the line? Solution The value of voltage Vy across diode is given by Vy V-R Since R and V are fixod values, this equation can by represented by a straight line on V-ly characteristics of diode; the is de kud li. When lg 0, maximum voltage across the diode V 30 V. This is point B(30, 0). 10 mA 30 V Fig. 2.25 Problem 2.4.
quick reply needed.
Which of the following options is FALSE about the semiconductor diodes? Lütfen birini seçin: O A. Diodes are made of semiconductor materials with additional dopping to enhance their conducting properties. O B. They are non-linear devices; hence, if one wants to draw their current-voltage graph, they will end up with an exponential plot. O C. The type of the semiconductor material matters in the characteristics of the device; such that the forward-bias voltage (Vp.) is different for Ge and Si based diodes. O D. They ideally let the electric current flow in the direction from cathode terminal to anode terminal, while completely blocking it in the direction from anode to cathode.
a) Use the diode’s characteristic equation,ID=Is exp(VD/VT), to determine the currentsourceIso that the output voltage is 1.5 V. b) If a load is attached to the output that draws 1 mA, what is the output voltage? c) If the circuit heats up to 40◦C, what is the output voltage without a load?
A 0.5 W zener diode is rated to have VzT = 4 V at a test current of IzT =11.0 mA. Its incremental resistance r, = 68.0 Ohms. What voltage will result when conducting a reverse current of Iz = 21 mA? What is the maximum safe current, using the linearized model and including the effect of rz?
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
With constant current flowing in the forward direction in a small-signal silicon diode, the voltage across the diode decreases with temperature by about 2 mV/K. Such a diode has a voltage of 0.650 V, with a current of 1 mA at a temperature of 25°C. Find the diode voltage at 1 mA and a temperature of 175°C.
Complete Solution. Find the voltage and the current in the silicon diode in 3rd Approximation with internal resistance of 2 ohms
A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kQ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode? * A. 10 V B. 1.0 V C. 0.7 V D. 0.3 V
The current measured in the circuit formed by using the practical diode model is… ... Please choose one: a. 0.73 mA b. 1.2 mA c. 0.80 mA D. 0.87 mA