(a) Consider the MOSFET amplifier circuit as shown in Fig. 2(a). The value of Rs = 1.0 k and assume that the MOSFET is operating in saturation mode. (i) Draw the small signal equivalent circuit. (ii) The peak input voltage, v,(peak) = 45 mV of the common drain amplifier circuit as shown in Fig. 2(a). The circuit for the output peak voltage, v,(peak) = 36 mV. Assume that Early voltage VA = 00 and K, = 2 mA/V², determine Ipq. p+VDD Cc RG= 200kn Oa + o Rs VGG Fig. 2(a)

(a) Consider the MOSFET amplifier circuit as shown in Fig. 2(a). The value of Rs = 1.0 k and assume that the MOSFET is operating in saturation mode. (i) Draw the small signal equivalent circuit. (ii) The peak input voltage, v,(peak) = 45 mV of the common drain amplifier circuit as shown in Fig. 2(a). The circuit for the output peak voltage, v,(peak) = 36 mV. Assume that Early voltage VA = 00 and K, = 2 mA/V², determine Ipq. p+VDD Cc RG= 200kn Oa + o Rs VGG Fig. 2(a)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Q.2/ For the amplifier’s circuits shown below:a. Determine the Q-point for each amplifier circuit.b. What is the maximum peak value of collector current that can be realized in each circuit?c. What is the maximum peak value of output voltage in each circuit?
VBB IB RB ww VcB + + VBE Figure 1 Ic Rc + VCE IE + Vcc
1:- For the emitter bias circuit shown in figure(1), if Vec-20V, B-50, RC-2k2, RB-430k2, and RE=1kQ. Vee (a) Determine IB, IC, and IE. (b) Determine VCE, VC, VE, VB. RB (c) Draw the de load line. Vo (d) The stability factor SICO. vì For the amplifier
(b) Figure Q.2(b) shows the power derating curve for a power transistor. It is rated for a maximum power dissipation of 115 W at a case temperature of 25 °C. The specified derating factor is 0.657 W/°C. The transistor has a thermal resistance case to ambient RecA= 7 °C/W. Calculate the following: (0) thermal resistance junction to case, Reic of the transistor. (ii) maximum power dissipation of the transistor at case temperature of 60°C. maximum power dissipation of the transistor at ambient temperature of 40°C. (iv) new value of Reca if the maximum power dissipation of the transistor is 50 W at ambient temperature of 40 °C. Po, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 O 25 50 75 100 125 150 175 200 Tc. CASE TEMPERATURE ("C) Figure Q.2(b): Power Derating Curve
4. Calculate the resistance Re for this circuit to drive the transistor into saturation. The BJT operates in the saturation region when its collector current is not dependent on the base current and has reached a maximum. BJT when saturated, VCE(sat) ≤ 0.2 V. $RB Is +10v Jafalka VCE = 0.2V B=150
Since the transistors used in the circuit are b=200 and r0= ∞(endless);A) By analyzing the DC for each amplifier floor separatelyre1, re2 find resistance values.B) Draw the AC equivalent circuit of the amplifier circuit.C) For each floor Zi=?, Z0 =?D) For each amplifier floor Av1, Av2 find the tension gains.E) Avl find Vl voltage value by finding voltage gain.
Assignment Goal: You are to research for different methods of biasing BJT circuits, and to choose and describe one of these methods in details in order to design a single stage common emitter or common base amplifier circuit. The report should have the following sections and cover the points listed below: 1. An overview about the purpose of biasing, and different methods of biasing. 2. Design method of your own simple amplifier circuit. 3. Calculations and analysis (including all DC and ac analysis: operating point, current and voltage gains, input and output resistances, voltage waveforms at all nodes in the amplifier circuit..., etc). 4. Simulation results. (Use BC107 for the BJT in your simulation). 5. A comparison between calculated and simulated results, and a conclusion. Support your design and results with explanation and parametric studies in details. For example, in your designed circuit, vary the value of the collector resistance Rc to change the mode of operation of the…
"Bias voltage applied to the emitter electrode of a transistor offers greater stability over bias toward its base." Why? How does that actually work? My professor wants a detailed, engineering level explanation for this, and I am struggling to understand this to the degree he is asking. He says having both a positive and negative voltage source at the emitter bias is not necessary, and won't accept this as part of the explanation. Thanks!
estion 2: Consider the BJT circuit given here. ( Write the input and output loop equations For the given values of Vcc= 10 V, Vin = 4V and resistor values, calculate all current values (IB, IC and IE) and VCE Assume that the ß for the transistor is 100 and the voltage drop across LED connected between Collector terminal and resistor (Rc) 2.1 V. TH i. ii. 111. VIN Vcc Rg=100 kΩ Re=2 kΩ LED 2.1 V B= 100 Based on the above analysis, correctly identify the current mode of operation Cutoff mode Active linear mode Saturation mode
Figure 1 shows the transfer curves of two different type of FET transistors. The transfer curve of transistor A is shown in Figure 1(a) that has ID(on) = 5mA and VGS(on) = 7V. Meanwhile, the transfer curve of transistor B is shown in Figure 1(b). (i) Determine the type of transistor A and B. (ii) State the correct equation for the transfer curve A and B. (iii) Sketch the basic construction of transistor A and B and label each part correctly. (iv) Briefly discuss one similarity in terms of the construction between the transistors A and B. 4'o (mA) D (mA) 8 12 11 7 10 5 4 6. 3 2 1 2 3 4 5 6. 7 8 VGS 1 -5 -4 -3 -2 -1 VGs Figure 1(a) Figure 1(b)
1) Write the 2 conditions for a diode to conduct 2)Find the value of the IC current in the NPN transistor amplifier circuit in the figure when IB is 1mA." (Beta=100) 3)If VCE is given as 0.5V when the transistor is in saturation and the voltage drop across the LED is 1.5V, what is the value of the RC resistor that provides the IC current?lf (Beta=100) 4)If the LED is shining brightly at a current of 12 mA, how many parallel LEDs can we operate? answer the questions(dont use chatgpt) Vcc= 12V Rc=? LED MVC IB Ic 40 E