The Darlington Transistor named after its inventor, Sidney Darlington, is a special arrangement of two standard NPN or PNP bipolar junction transistors (BJT) connected together as shown below. The Emitter of one transistor is connected to the Base of the other to produce a more sensitive transistor with a much larger current gain being useful in applications where current amplification or switching is required. Connect two NPN transistors to form a Darlington pair and plot the Gummel characteristics. Show that B at any Vag is multiplication of ßs of the individual transistors. Colector Base O- TR: TR: NPN Emitter

The Darlington Transistor named after its inventor, Sidney Darlington, is a special arrangement of two standard NPN or PNP bipolar junction transistors (BJT) connected together as shown below. The Emitter of one transistor is connected to the Base of the other to produce a more sensitive transistor with a much larger current gain being useful in applications where current amplification or switching is required. Connect two NPN transistors to form a Darlington pair and plot the Gummel characteristics. Show that B at any Vag is multiplication of ßs of the individual transistors. Colector Base O- TR: TR: NPN Emitter

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
Describe the working principles of Bipolar Junction Transistor (BJT): Study of Single Stage Transistor Common Emitter Amplifier
1. To use the Bipolar Junction Transistor (BJT) as a small signal amplifier it must be biased in this region: A. South Park region B. Spatial interface region C. Inverse Thevenin region D. Linear or active region
If the common base DC current gain (a) of a BJT is 0.95, its common emitter DC current gain is
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7. What are the different transistor dc bias configuration? Illustrate each.
In the circuit given in the figure, Vcc = 15 V, R1 = R2 = 10kΩ, RE = 1KΩ, RL = 0.5kΩ and transistor parameters are given as VBE = 0.7V, ßdc = ß0 = 100. a. Calculate the values of DC bias currents and voltages (IBQ, ICQ and VCEQ). b. Draw the small signal equivalent circuit of the circuit using the hybrid model of the transistor. c. Derive the input impedance expression of the circuit and calculate its value. d. Derive the AVI and AVG voltage gain expressions and calculate their values. e. Derive the current gain expression AI = I0 / Ii and calculate its value. Compare this value you have calculated with the value you will calculate using the expression Aİ = Zi AVI / RL.