Question three: Given the BJT transistor characteristics of Figure below: a. Draw a load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rg to establish the resulting operating point. c. What are the resulting values of Ico and VCEQ?

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Question three:
Given the BJT transistor characteristics of Figure below:
a. Draw
load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed-
bias configuration.
b. Choose an operating point midway between cutoff and saturation. Determine the
value of Rp to establish the resulting operating point.
c. What are the resulting values of Ico and Vceq?
d. What is the value of ß at the operating point?
e. What is the value of a defined by the operating point?
f. What is the saturation current (Icsar) for the design?
g. Sketch the resulting fixed-bias configuration.
h. What is the dc power dissipated by the device at the operating point?
i. What is the power supplied by Vcc?
j. Determine the power dissipated by the resistive elements by taking the difference
between the results of parts (h) and (i).
1 Ic(mA)
110HA
100 µA
10
9
40 µÃ
5
30 HA
4
20 μΑ
10 HA
10
15
20
25
30
VCE (V)
Transcribed Image Text:Question three: Given the BJT transistor characteristics of Figure below: a. Draw load line on the characteristics determined by Vcc=21 V and R= 3 kQ for a fixed- bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rp to establish the resulting operating point. c. What are the resulting values of Ico and Vceq? d. What is the value of ß at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Icsar) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the dc power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1 Ic(mA) 110HA 100 µA 10 9 40 µÃ 5 30 HA 4 20 μΑ 10 HA 10 15 20 25 30 VCE (V)
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