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A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 × 10¹5 cm²³ and Nå = 2 × 10¹5 cm²³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo =5 x10-7 s. At t =0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.

A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 × 10¹5 cm²³ and Nå = 2 × 10¹5 cm²³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo =5 x10-7 s. At t =0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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Question 5 -3 A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 x 10¹5 cm3 and N₁ = 2 × 10¹5 cm³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo = 5 x107 s. At t=0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.
Transcribed Image Text:Question 5 -3 A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 x 10¹5 cm3 and N₁ = 2 × 10¹5 cm³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo = 5 x107 s. At t=0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.
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