Homework Help is Here – Start Your Trial Now!
Engineering
Electrical Engineering
A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 × 10¹5 cm²³ and Nå = 2 × 10¹5 cm²³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo =5 x10-7 s. At t =0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.

A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 × 10¹5 cm²³ and Nå = 2 × 10¹5 cm²³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo =5 x10-7 s. At t =0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)
10th Edition
ISBN:9781337399128
Author:Russell E. Smith
Publisher:Russell E. Smith
Chapter12: Electronic Control Devices
Section: Chapter Questions
Problem 14RQ
See similar textbooks
icon
Related questions
Question
Question 5 -3 A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 x 10¹5 cm3 and N₁ = 2 × 10¹5 cm³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo = 5 x107 s. At t=0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.
Transcribed Image Text:Question 5 -3 A bar of silicon at T =300 K has a length of L= 0.05 cm and a cross-sectional area of A = 10-5 cm². The semiconductor is uniformly doped with Na=8 x 10¹5 cm3 and N₁ = 2 × 10¹5 cm³. A voltage of 10 V is applied across the length of the material. For t<0, the semiconductor has been uniformly illuminated with light, producing an excess carrier generation rate of g'=8 x 1020 cm ³s¹. The minority carrier lifetime is Tpo = 5 x107 s. At t=0, the light source is turned off. Determine the current in the semiconductor as a function of time for t≥0.
Expert Solution
trending now

Trending now

This is a popular solution!

steps

Step by step

Solved in 3 steps with 7 images

SEE SOLUTIONCheck out a sample Q&A here
Blurred answer
Knowledge Booster
Mechanisms of Heat Transfer
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Electricity for Refrigeration, Heating, and Air C…
Electricity for Refrigeration, Heating, and Air C…
Mechanical Engineering
ISBN:
9781337399128
Author:
Russell E. Smith
Publisher:
Cengage Learning
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
SEE MORE TEXTBOOKS