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Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)-1.12x10ʻ Viem x 10 " cm 037- מ- *,0.73x 10* cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x-Xp, then what is the voltage at x0?

Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)-1.12x10ʻ Viem x 10 " cm 037- מ- *,0.73x 10* cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x-Xp, then what is the voltage at x0?

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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6:36 Expert Q&A Done Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)=1.12x10 Vicm -1, 0.37 x10 cm x,0.73x 10 cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x =Xp, then what is the voltage at x -0?
Transcribed Image Text:6:36 Expert Q&A Done Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)=1.12x10 Vicm -1, 0.37 x10 cm x,0.73x 10 cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x =Xp, then what is the voltage at x -0?
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