A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B

A p-n heterojunction is formed though Semiconductor A intimately contacting with Semiconductor B. The energy band diagrams for two semiconductors are shown in Figure 2 on page 4. It is given that = ХА — 2.0 еV, хв — 1.5 eV, EрА %3D 2.9eV, Erв %3D 2.0 еV, EgA 3D 1.3 eV, Egв — 2.8 eV If a small positive voltage is applied to Semiconductor A, and Semiconductor B is grounded, explain how the potential barrier changes in comparison with the thermal equilibrium condition. The vacuum level Хв ХА Есв ECA- EFB EgB EFA EVA EVB Semiconductor A Semiconductor B

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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