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7. For certain applications of power supply a power semiconductor switch is required to operate with 400V, 200A load and switching frequency of 100 kHz.The power switching device suitable for this task is: (a) GTO (b) IGBT (c) MOSFT (d) BJT (e) Triac

7. For certain applications of power supply a power semiconductor switch is required to operate with 400V, 200A load and switching frequency of 100 kHz.The power switching device suitable for this task is: (a) GTO (b) IGBT (c) MOSFT (d) BJT (e) Triac

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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7. For certain applications of power supply a power semiconductor switch is required to operate with 400V, 200A load and switching frequency of 100 kHz .The power switching device suitable for this task is: (a) GTO (b) IGBT (c) MOSFT (d) BJT (e) Triac 8. The latching current of an SCR used in a phase-control circuit, comprising an inductive load of R= 10 ohms in series with L= 0.1H, is 10mA.The supply voltage is 325 sin 314 t volts. Obtain the minimum gate pulse width required for reliable triggering of the SCR if it is gated at an angle of 45° in every positive half-cycle. The load current i(t) for the circuit is given by : i(t)=[Vm/√R² + (ot)2] [sin (314t+45°-p) - sin( 45°-p)exp(-Rt/L)] where Vm= 325 V, -314, tan q = 3.14 (ANS: At> 4.35 µS) 9. The gate-cathode junction of the SCR in problem (8) above has a voltage - current characteristic which is a straight line passing through the origin with a gradient of 3000 volts/amp, calculate the minimum required gate source resistance given that available gating voltage is 10 V and the maximum permissible gate dissipation is 12 mW. (Ans: 2 k22) 10. A thyristor with a latching current of 40 mA is used in the circuit shown in Fig.1. If a firing pulse of 50 µs is applied at the instant of maximum source voltage, show that the thyristor will not be turned on. What value of resistance R connected as shown to ensure triggering (turn-on).
Transcribed Image Text:7. For certain applications of power supply a power semiconductor switch is required to operate with 400V, 200A load and switching frequency of 100 kHz .The power switching device suitable for this task is: (a) GTO (b) IGBT (c) MOSFT (d) BJT (e) Triac 8. The latching current of an SCR used in a phase-control circuit, comprising an inductive load of R= 10 ohms in series with L= 0.1H, is 10mA.The supply voltage is 325 sin 314 t volts. Obtain the minimum gate pulse width required for reliable triggering of the SCR if it is gated at an angle of 45° in every positive half-cycle. The load current i(t) for the circuit is given by : i(t)=[Vm/√R² + (ot)2] [sin (314t+45°-p) - sin( 45°-p)exp(-Rt/L)] where Vm= 325 V, -314, tan q = 3.14 (ANS: At> 4.35 µS) 9. The gate-cathode junction of the SCR in problem (8) above has a voltage - current characteristic which is a straight line passing through the origin with a gradient of 3000 volts/amp, calculate the minimum required gate source resistance given that available gating voltage is 10 V and the maximum permissible gate dissipation is 12 mW. (Ans: 2 k22) 10. A thyristor with a latching current of 40 mA is used in the circuit shown in Fig.1. If a firing pulse of 50 µs is applied at the instant of maximum source voltage, show that the thyristor will not be turned on. What value of resistance R connected as shown to ensure triggering (turn-on).
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