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6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.
Transcribed Image Text:6.19 Consider a bar of p-type silicon that is uniformly doped to a value of N = 2 x 101 cm³ at 7=300 K. The applied electric field is zero. A light source is incident on the end of the semiconductor as shown in Figure P6.19. The steady-state concentration of excess carriers generated at x = 0 is 8p(0) = Sn(0) = 2 x 104 cm³. Assume the following Light p type x=0 Figure P6.19 | Figure for Problems 6.19 and 6.21. parameters: μ = 1200 cm²/V-s, μp = 400 cm²/V-s, T = 10-6 s, and 7p = 5 × 10-7 s. Neglecting surface effects, (a) determine the steady-state excess electron and hole concentrations as a function of distance into the semiconductor, and (b) calculate the steady-state electron and hole diffusion current densities as a function of distance into the semiconductor.
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