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6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?

6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?
Transcribed Image Text:6.1 Consider silicon at 7 = 300 K that is doped with donor impurity atoms to a concentra- tion of Na = 5 x 105 cm³. The excess carrier lifetime is 2 x 10-'s. (a) Determine the thermal equilibrium recombination rate of holes. (b) Excess carriers are generated such that Sn = p = 104 cm³. What is the recombination rate of holes for this condition?
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