5) Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm.sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 108 106 200 400 600 800 1000 1200 1400 1600 1800 T(K) Intrinsic carier concentration (m)

5) Below the temperature dependence of charge carrier concentrations of intrinsic semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these materials, b) determine the the energy difference between the Fermi Energy and the conduction band and c) determine the electrical conductivities of Ge and Si at room temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm.sec, respectively, for both materials 1028 1026 1024 Ge 1022 Si 1020 1018 1016 1014 1012 1010 108 106 200 400 600 800 1000 1200 1400 1600 1800 T(K) Intrinsic carier concentration (m)

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Concept explainers

Types of Charge Carriers

A carrier is a type of object which carries a particular thing from one point to another point. For instance, people use different vehicles from one place to another, and the vehicle carries those people and acts as a carrier.

Question

5) Below the temperature dependence of charge carrier concentrations of intrinsic
semiconductors Ge and Si are given. Based on this graph a) determine the band gaps of these
materials, b) determine the the energy difference between the Fermi Energy and the
conduction band and c) determine the electrical conductivities of Ge and Si at room
temperature. Assume electron and hole mobilities are 0.8 and 0.01 V/cm.sec, respectively,
for both materials
1028
1026
1024
Ge
1022
Si
1020
1018
1016
1014
1012
1010
108
106
200 400 600 800 1000 1200 1400 1600 1800
T (K)
Intrinsic carrier concentration (m)

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