(4) The value of effective density of state of Si is Nv= 1.04 x 1019 cm-³at T= 300 °K. If Silicon at T= 300 °K is doped with acceptor atoms at a concentration of Na = 8 x 1015 cm3. (a) Determine EF- Ev. (b) Calculate the fraction of the concentration of additional acceptor atoms that must be added to move the Fermi level a distance 2 kT closer to the valence band. (c) Calculate the amount of deviation for EF- Ev when temperature rise to 77°C.

(4) The value of effective density of state of Si is Nv= 1.04 x 1019 cm-³at T= 300 °K. If Silicon at T= 300 °K is doped with acceptor atoms at a concentration of Na = 8 x 1015 cm3. (a) Determine EF- Ev. (b) Calculate the fraction of the concentration of additional acceptor atoms that must be added to move the Fermi level a distance 2 kT closer to the valence band. (c) Calculate the amount of deviation for EF- Ev when temperature rise to 77°C.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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