For silicon (Si) semiconductor material, at T=300 K,Fermi level (EF) is located o.1 eV above the highest level ofthe valence band. Given that E, is located o.03 eV above Ecand E, is located o.01 eV below Ey Answer the followingquestions:Draw the energy band diagram of thesemiconductor. In you drawing, you have to show thea)location of Ec, Ey, EG, EF, Ej, E, and E2. Also, you have toshow both conduction band and valence band.b)What is the type of semiconductor, n-type, p-type or intrinsic? Justify your answer.c)Calculate the probability that a state withenergy, E= E, is occupied.d)Calculate the density of state at energylevel E, in (eV-.cm-3).

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questions: Draw the energy band diagram of the semiconductor. In you drawing, you have to show the location of Ec, Ev, Eg, EF, E¡, E, and E2. Also, you have to a) show both conduction band and valence band. b) What is the type of semiconductor, n- type, p-type or intrinsic? Justify your answer. c) Calculate the probability that a state with energy, E= E, is occupied.

questions: Draw the energy band diagram of the semiconductor. In you drawing, you have to show the location of Ec, Ev, Eg, EF, E¡, E, and E2. Also, you have to a) show both conduction band and valence band. b) What is the type of semiconductor, n- type, p-type or intrinsic? Justify your answer. c) Calculate the probability that a state with energy, E= E, is occupied.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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