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3- For the pn junction with Na = 1018 /cm², Np=0.5 x 1016 /cm², A = 104 cm² , n¡ = 1.5 x 1010 /cm?, let L, = 10 µm, L. = 20 µm, D, (in the n region) = 10 cm?/V.s, and D, (in the p region) = 18 cm?/V.s. find the value of I, and the current I at V = 0.565 V. 4- For a p-type silicon in which the dopant concentration Na = 2 x 10'8/cm², find the hole and electron concentrations at T= 360 K.

3- For the pn junction with Na = 1018 /cm², Np=0.5 x 1016 /cm², A = 104 cm² , n¡ = 1.5 x 1010 /cm?, let L, = 10 µm, L. = 20 µm, D, (in the n region) = 10 cm?/V.s, and D, (in the p region) = 18 cm?/V.s. find the value of I, and the current I at V = 0.565 V. 4- For a p-type silicon in which the dopant concentration Na = 2 x 10'8/cm², find the hole and electron concentrations at T= 360 K.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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3- For the pn junction with Na = 1018 /em², Np=0.5 x 1016 /cm², A = 104 cm² , n¡ =1.5 x 1010 /cm?, let L, = 10 um, Ln = 20 µm, D, (in the n region) = 10 cm?/V.s, and D, (in the p region) = 18 cm?/V.s. find the value of Is and the current I at V = 0.565 V. 4- For a p-type silicon in which the dopant concentration NA = 2 x 1018/cm³, find the hole and electron concentrations at T= 360 K.
Transcribed Image Text:3- For the pn junction with Na = 1018 /em², Np=0.5 x 1016 /cm², A = 104 cm² , n¡ =1.5 x 1010 /cm?, let L, = 10 um, Ln = 20 µm, D, (in the n region) = 10 cm?/V.s, and D, (in the p region) = 18 cm?/V.s. find the value of Is and the current I at V = 0.565 V. 4- For a p-type silicon in which the dopant concentration NA = 2 x 1018/cm³, find the hole and electron concentrations at T= 360 K.
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