I Homework 6b 03182022.docx.pdf - Adobe ReaderFileEdit View Window HelpTools Fill & Sign CommentОpen3125%ITSign In• Export PDF• Create PDFv Edit PDFAdobe Acrobat ProEasily edit text and images in PDFdocumentsStart Now• Combine PDF• Send Files• Store Files3.A one sided p+/n silicon junction at 300K is dopedwith NA = 101/cm³.Design a junction so that C;=8 nF/cm2 at a reversevoltage (VR) = 6.0V.Assume Vbi-0.8V.Hint: Calculate Np.10:22 AMType here to search31°CW23-Mar-22---II

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Start Now > Combine PDF > Send Files > Store Files 3. A one sided p+/n silicon junction at 300K is doped with NA = 1019%cm³. Design a junction so that C;=8 nF/cm² at a reverse voltage (VR) = 6.0V. Assume Vbi-0.8V. Hint: Calculate Np. 10:22 AM P Type here to search w] 31°C 中 23-Mar-22

Start Now > Combine PDF > Send Files > Store Files 3. A one sided p+/n silicon junction at 300K is doped with NA = 1019%cm³. Design a junction so that C;=8 nF/cm² at a reverse voltage (VR) = 6.0V. Assume Vbi-0.8V. Hint: Calculate Np. 10:22 AM P Type here to search w] 31°C 中 23-Mar-22

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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3.
A one sided p+/n silicon junction at 300K is doped
with NA = 101/cm³.
Design a junction so that C;=8 nF/cm2 at a reverse
voltage (VR) = 6.0V.
Assume Vbi-0.8V.
Hint: Calculate Np.
10:22 AM
Type here to search
31°C
W
23-Mar-22
---
II

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