2. A particular semiconductor material is doped at N 2 x 104 cm- and N, 1.2 x 104 cm. The %3D thermal equilibrium electron concentration is found to be no = 1.1 x 1014 cm3. Assuming complete ionization, determine the intrinsic carrier concentration and the thermal equilibrium hole concentration.
2. A particular semiconductor material is doped at N 2 x 104 cm- and N, 1.2 x 104 cm. The %3D thermal equilibrium electron concentration is found to be no = 1.1 x 1014 cm3. Assuming complete ionization, determine the intrinsic carrier concentration and the thermal equilibrium hole concentration.
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Transcribed Image Text:2. A particular semiconductor material is doped at Na 2x 104 cm- and N, = 1.2 x 104 cm-3. The
thermal equilibrium electron concentration is found to be no = 1.1 x 1014 cm3. Assuming complete
ionization, determine the intrinsic carrier concentration and the thermal equilibrium hole concentration.
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