2. A Germanium sample is 10 mm long and has a rectangular cross-section, 60 µm by 180 um. A Boron atom with concentration of 2.4 x 1015/cm at 300 K is added. A steady current of 50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm³ 5 x 10^22 4.4 x 10^22 Energy Gap, Eg, at OK (eV) Energy Gap, Eg at 300K (eV) 1.21 0.785 1.12 0.72 Resistivity at 300K (ohm-cm) Electron Mobility,µa at 300K (cm²/V-s) Hole Mobility, µp at 300K (cm²/V-s) 2.3 x 1015 45 1500 3800 475 1800 Intrinsic Concentration, n; at 300K (cm³) 1.45 x 10^10 2.5 x 10^13 Electron Diffusion Constant, D, at 300K (cm³/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm/s) 13 47 Melting Point (°C) 1415 937

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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2. A Germanium sample is 10 mm long and has a rectangular cross-section, 60 µm by 180 um.
A Boron atom with concentration of 2.4 x 1015/cm at 300 K is added. A steady current of
50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the
voltage across the bar.
TABLE OF CONSTANTS
Properties
Silicon
Germanium
Atomic Number
14
32
Atomic Weight
28.1
72.6
Density (g/cm³)
2.83
5.32
Relative Permittivity (Dielectric Constant)
11.9
16
Atoms/cm³
5 x 10^22
4.4 x 10^22
Energy Gap, Eg, at OK (eV)
Energy Gap, Eg at 300K (eV)
1.21
0.785
1.12
0.72
Resistivity at 300K (ohm-cm)
Electron Mobility,µa at 300K (cm²/V-s)
Hole Mobility, µp at 300K (cm²/V-s)
2.3 x 1015
45
1500
3800
475
1800
Intrinsic Concentration, n; at 300K (cm³)
1.45 x 10^10
2.5 x 10^13
Electron Diffusion Constant, D, at 300K (cm³/s)
34
99
Hole Diffusion Constant, Dp at 300K (cm/s)
13
47
Melting Point (°C)
1415
937
Transcribed Image Text:2. A Germanium sample is 10 mm long and has a rectangular cross-section, 60 µm by 180 um. A Boron atom with concentration of 2.4 x 1015/cm at 300 K is added. A steady current of 50 µA exists in the bar. Solve for the hole concentration, electron concentration, and the voltage across the bar. TABLE OF CONSTANTS Properties Silicon Germanium Atomic Number 14 32 Atomic Weight 28.1 72.6 Density (g/cm³) 2.83 5.32 Relative Permittivity (Dielectric Constant) 11.9 16 Atoms/cm³ 5 x 10^22 4.4 x 10^22 Energy Gap, Eg, at OK (eV) Energy Gap, Eg at 300K (eV) 1.21 0.785 1.12 0.72 Resistivity at 300K (ohm-cm) Electron Mobility,µa at 300K (cm²/V-s) Hole Mobility, µp at 300K (cm²/V-s) 2.3 x 1015 45 1500 3800 475 1800 Intrinsic Concentration, n; at 300K (cm³) 1.45 x 10^10 2.5 x 10^13 Electron Diffusion Constant, D, at 300K (cm³/s) 34 99 Hole Diffusion Constant, Dp at 300K (cm/s) 13 47 Melting Point (°C) 1415 937
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