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12.22 A silicon pnp bipolar transistor at 7 = 300 K has a B-E cross-sectional area of ABE = 5 x 104 cm², neutral base width of x = 0.70 μm, a neutral emitter width of XE = 0.50 μm, and uniform doping concentrations of N = 5 × 10¹7 cm³, NB = 1016 cm³, and Nc = 105 cm³. Other transistor parameters are DB = 10 cm²/s, DE = 15 cm²/s, TED = 5 x 10-7 s, and 7co = 2 × 10-6 s. The transistor is biased in the forward-active mode and the recombination factor is 8 = 0.995. Determine the collector current for (a) VEB = 0.550 V, (b) IB = 0.80 μA, and (c) Iε = 125 μA.

12.22 A silicon pnp bipolar transistor at 7 = 300 K has a B-E cross-sectional area of ABE = 5 x 104 cm², neutral base width of x = 0.70 μm, a neutral emitter width of XE = 0.50 μm, and uniform doping concentrations of N = 5 × 10¹7 cm³, NB = 1016 cm³, and Nc = 105 cm³. Other transistor parameters are DB = 10 cm²/s, DE = 15 cm²/s, TED = 5 x 10-7 s, and 7co = 2 × 10-6 s. The transistor is biased in the forward-active mode and the recombination factor is 8 = 0.995. Determine the collector current for (a) VEB = 0.550 V, (b) IB = 0.80 μA, and (c) Iε = 125 μA.

Computer Networking: A Top-Down Approach (7th Edition)
Computer Networking: A Top-Down Approach (7th Edition)
7th Edition
ISBN:9780133594140
Author:James Kurose, Keith Ross
Publisher:James Kurose, Keith Ross
Chapter1: Computer Networks And The Internet
Section: Chapter Questions
Problem R1RQ: What is the difference between a host and an end system? List several different types of end...
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12.22 A silicon pnp bipolar transistor at 7 = 300 K has a B-E cross-sectional area of ABE = 5 x 104 cm², neutral base width of x = 0.70 μm, a neutral emitter width of XE = 0.50 μm, and uniform doping concentrations of N = 5 × 10¹7 cm³, NB = 1016 cm³, and Nc = 105 cm³. Other transistor parameters are DB = 10 cm²/s, DE = 15 cm²/s, TED = 5 x 10-7 s, and 7co = 2 × 10-6 s. The transistor is biased in the forward-active mode and the recombination factor is 8 = 0.995. Determine the collector current for (a) VEB = 0.550 V, (b) IB = 0.80 μA, and (c) Iε = 125 μA.
Transcribed Image Text:12.22 A silicon pnp bipolar transistor at 7 = 300 K has a B-E cross-sectional area of ABE = 5 x 104 cm², neutral base width of x = 0.70 μm, a neutral emitter width of XE = 0.50 μm, and uniform doping concentrations of N = 5 × 10¹7 cm³, NB = 1016 cm³, and Nc = 105 cm³. Other transistor parameters are DB = 10 cm²/s, DE = 15 cm²/s, TED = 5 x 10-7 s, and 7co = 2 × 10-6 s. The transistor is biased in the forward-active mode and the recombination factor is 8 = 0.995. Determine the collector current for (a) VEB = 0.550 V, (b) IB = 0.80 μA, and (c) Iε = 125 μA.
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