-10¹2 cm³, respectively. The electron densities in RIE and HDP systems range between 10° -10 and 10⁰ Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate the ionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is the ratio of the electron density to the density of molecules.

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cm³, respectively.
5. The electron densities in RIE and HDP systems range between 10%-10¹0 and 10¹
Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate the
ionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is the
ratio of the electron density to the density of molecules.
6. For a boron diffusion in silicon at 1000°C, the surface concentration is maintained at 1019 cm-3 and the
diffusion time is 1 h. If the diffusion coefficient of boron at 1000°C is 2x×10¹4 cm²/s, find Q(t) and the gradient
at x = 0 and at a location where the dopant concentration reaches 10¹5 cm ³.
Transcribed Image Text:cm³, respectively. 5. The electron densities in RIE and HDP systems range between 10%-10¹0 and 10¹ Assuming that the RIE chamber pressure is 200 mTorr and HDP chamber pressure is 5 mTorr, calculate the ionization efficiency in RIE reactors and HDP reactors at room temperature. The ionization efficiency is the ratio of the electron density to the density of molecules. 6. For a boron diffusion in silicon at 1000°C, the surface concentration is maintained at 1019 cm-3 and the diffusion time is 1 h. If the diffusion coefficient of boron at 1000°C is 2x×10¹4 cm²/s, find Q(t) and the gradient at x = 0 and at a location where the dopant concentration reaches 10¹5 cm ³.
7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4
atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a background
doping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200°C. For As diffusion, Do = 24 cm²/s, and
Ea = 4.08 eV.
8. Assume 100 keV boron implants on a 200 mm silicon wafer at a dose of 5×10¹4 ions/cm². The projected range
and projected straggle (op) are 0.31 and 0.07 μm, respectively. Calculate the peak concentration and the required
ion-beam current for 1 min of implantation.
Transcribed Image Text:7. Arsenic was pre-deposited by arsine gas, and the resulting total amount of dopant per unit area was 1×10¹4 atoms/cm². How long would it take to drive the arsenic into a junction depth of 1 µm? Assume a background doping of CB = 1×10¹5 atoms/cm³ and a drive-in temperature of 1200°C. For As diffusion, Do = 24 cm²/s, and Ea = 4.08 eV. 8. Assume 100 keV boron implants on a 200 mm silicon wafer at a dose of 5×10¹4 ions/cm². The projected range and projected straggle (op) are 0.31 and 0.07 μm, respectively. Calculate the peak concentration and the required ion-beam current for 1 min of implantation.
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