1. A 0.6 µm film of silicon dioxide is to be etched with a buffered oxide etchant (BOE) with an etch rate of 750 A/min. Process data show that the thickness may vary up to 10% and the etch rate may vary up to 15%. (a) Specify a time for the etch process. (b) Predict how much undercut will occur at the top of the film

1. A 0.6 µm film of silicon dioxide is to be etched with a buffered oxide etchant (BOE) with an etch rate of 750 A/min. Process data show that the thickness may vary up to 10% and the etch rate may vary up to 15%. (a) Specify a time for the etch process. (b) Predict how much undercut will occur at the top of the film

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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