1. A 0.6 µm film of silicon dioxide is to be etched with a buffered oxide etchant (BOE) with an etch rate of 750 A/min. Process data show that the thickness may vary up to 10% and the etch rate may vary up to 15%. (a) Specify a time for the etch process. (b) Predict how much undercut will occur at the top of the film

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1. A 0.6 um film of silicon dioxide is to be etched with a buffered oxide etchant (BOE) with an etch
rate of 750 A/min. Process data show that the thickness may vary up to 10% and the etch rate may
vary up to 15%.
(a) Specify a time for the etch process.
(b) Predict how much undercut will occur at the top of the film
Transcribed Image Text:1. A 0.6 um film of silicon dioxide is to be etched with a buffered oxide etchant (BOE) with an etch rate of 750 A/min. Process data show that the thickness may vary up to 10% and the etch rate may vary up to 15%. (a) Specify a time for the etch process. (b) Predict how much undercut will occur at the top of the film
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